Depth of interaction and bias voltage dependence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-raysShow others and affiliations
2012 (English)In: Journal of Instrumentation, E-ISSN 1748-0221, Vol. 7, no 3, p. Art. no. C03002-Article in journal (Refereed) Published
Abstract [en]
High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20Όm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110Όm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of ∌20 degrees to the surface and then passed through ∌25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field. © 2012 IOP Publishing Ltd and Sissa Medialab srl.
Place, publisher, year, edition, pages
2012. Vol. 7, no 3, p. Art. no. C03002-
Keywords [en]
Detector design and construction technologies and materials; X-ray detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-16738DOI: 10.1088/1748-0221/7/03/C03002ISI: 000304015300002Scopus ID: 2-s2.0-84858777567Local ID: STCOAI: oai:DiVA.org:miun-16738DiVA, id: diva2:545678
2012-08-212012-08-172025-09-25Bibliographically approved
In thesis