The Permeable Base Transistor (PBT) is considered to be a high frequency device with simulated fT and fmax values in the order of 100 GHz. In this work we present several PBT devices in silicon. The fabrication process steps have been developed and optimised in order to meet the demands of a future integration in a standard CMOS processing. Cobalt disilicide is used for the emitter metallization and base metallisation in order to form a good Schottky contact. The important issues of a fabrication process reliability and controllability are discussed in this paper. The process steps had been analysed by standard analysis methods. Electrical (DC) characterisation of the devices has been performed. The obtained results are in a good agreement with the 2D simulations.