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A study of the anisotropic transport in 4H and 6H silicon carbide by Monte Carlo simulation
Hjelm, Mats
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Nilsson, Hans-Erik
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
ORCID iD:
0000-0002-3790-0729
Käckell, P
Persson, C
Sannemo, Ulf
Pettersson, C.S.
Show others and affiliations
1999 (English)
In:
Physica scripta Topical issues, ISSN 0281-1847, Vol. 79, p. 42-45
Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1999. Vol. 79, p. 42-45
Keywords [en]
4H-SiC, 6H-SiC, Monte Carlo
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN:
urn:nbn:se:miun:diva-1863
Local ID: 655
OAI: oai:DiVA.org:miun-1863
DiVA, id:
diva2:26895
Available from:
2008-09-30
Created:
2008-09-30
Last updated:
2025-09-25
Bibliographically approved
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Hjelm, Mats
Nilsson, Hans-Erik
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Nilsson, Hans-Erik
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ieee
modern-language-association-8th-edition
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apa
ieee
modern-language-association-8th-edition
vancouver
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de-DE
en-GB
en-US
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nn-NB
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