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Full band Monte Carlo simulation of a 100 nm 4H-SiC high frequency MOSFET
Hjelm, Mats
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Nilsson, Hans-Erik
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
ORCID iD:
0000-0002-3790-0729
Dubaric, Ervin
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Kackell, P
Petersson, Sture
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Show others and affiliations
Responsible organisation
Mid Sweden University
1998 (English)
In:
Compound Semiconductors 1998. Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors 12-16 Oct. 1998 , Nara, Japan, 1998, p. 273-278
Conference paper, Published paper (Other academic)
Place, publisher, year, edition, pages
1998. p. 273-278
Keywords [en]
Monte Carlo, 4H-SiC, MOSFET
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN:
urn:nbn:se:miun:diva-1811
ISI:
000177562700043
Local ID: 548
ISBN:
0 7503 0611 4 (print)
OAI: oai:DiVA.org:miun-1811
DiVA, id:
diva2:26843
Available from:
2008-12-11
Created:
2008-12-11
Last updated:
2025-09-25
Bibliographically approved
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Hjelm, Mats
Nilsson, Hans-Erik
Dubaric, Ervin
Petersson, Sture
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Hjelm, Mats
Nilsson, Hans-Erik
Dubaric, Ervin
Petersson, Sture
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ieee
modern-language-association-8th-edition
vancouver
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apa
ieee
modern-language-association-8th-edition
vancouver
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de-DE
en-GB
en-US
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nn-NB
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