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Electron localization probed by temperature-dependent tunneling spectroscopy in 1T-TaS2
CHALMERS UNIV TECHNOL, DEPT PHYS.ORCID iD: 0000-0001-7329-3359
1997 (English)In: Journal of the Korean Physical Society, ISSN 0374-4884, E-ISSN 1976-8524, Vol. 31, no 1, p. 131-134Article in journal (Refereed) Published
Abstract [en]

In order to present a clear picture of the density of states at both sides of the Fermi level (E-F) in 1T-TaS2 near the nearly commensurate to commensurate transition (similar to 187 K) and at low temperatures, we have done a temperature-dependent tunneling spectroscopy study using a scanning tunneling microscope. We observed an abrupt transition from a charge-density-wave induced depletion to an opening of a deep pseudo gap near the E-F of the nearly commensurate to commensurate transition within similar to 1 K. The measured pseudo gap turned out to be deep enough to form localized states at E-F. In contrast to an inverse photoelectron spectroscopy study, our tunneling results indicate the gap structures of two Hubbard subbands resulting from band splitting of the Ta 5d band due to the electron correlation effect.

Place, publisher, year, edition, pages
1997. Vol. 31, no 1, p. 131-134
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-9873OAI: oai:DiVA.org:miun-9873DiVA, id: diva2:236692
Note
International Conference on Advanced Materials and Devices 96, KANGWANDO, SOUTH KOREA, JUN 11-13, 1996Available from: 2009-09-24 Created: 2009-09-24 Last updated: 2025-09-25Bibliographically approved

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Olin, Håkan

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