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Oxygen distribution profiles in thin evaporated contacts on single crystal silicon
Uppsala Universitet.
Uppsala Universitet.
Uppsala Universitet.
Uppsala Universitet.
1978 (English)In: Nuclear instruments and methods, Vol. 149, p. 285-288Article in journal (Refereed) Published
Abstract [en]

The nuclear resonance in the l6O(a, a)l6O elastic scattering reaction at 3.045 MeV has been used in concentration profilemeasurements ol oxygen in thin-film structuresThe concentration profile can be deduced lrom an energy scan ol the incoming a-particies, thus shifting the resonanceto different depths in the sample. The methocl has been applie<i to studies of the structures (a) an etched Si-surface, (b)Au evaporated on Si, and (c) a Au-Ge-Si structure. Eviclence is presented for the presence of oxygen in the Au layerand in the Ge layer.

Place, publisher, year, edition, pages
1978. Vol. 149, p. 285-288
National Category
Physical Sciences
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URN: urn:nbn:se:miun:diva-23477OAI: oai:DiVA.org:miun-23477DiVA, id: diva2:765074
Available from: 2014-11-21 Created: 2014-11-21 Last updated: 2025-09-25Bibliographically approved

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Petersson, Sture

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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf