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  • 1.
    Nilsson, Hans-Erik
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Dubaric, Ervin
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Hjelm, Mats
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Englund, U.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Monte Carlo simulation of the transient response of single photon absorption in X-ray pixel detectors2003In: Mathematics and Computers in Simulation, ISSN 0378-4754, E-ISSN 1872-7166, Vol. 62, p. 471-478Article in journal (Refereed)
    Abstract [en]

    A Monte Carlo study of the transient response of single photon absorption in X-ray pixel detectors is presented. The simulation results have been combined with Monte Carlo simulation of the X-ray photon transport and absorption, and used to estimate the image properties of a detector system, including the pixel array and readout electronics. The study includes several different simulation challenges, such as full band Monte Carlo simulation of charge transport in large devices (300 mu m * 100 mu m), modelling of three-dimensional electrostatic effects using cylindrical coordinates, Monte Carlo simulation of photon transport and absorption, and a system level Monte Carlo simulation of the entire pixel detector and readout

  • 2.
    Nilsson, Hans-Erik
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Englund, U.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Hjelm, Mats
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media. Royal Institute of Technology (KTH).
    Full-band Monte Carlo simulation of electron transport in 3C-SiC2002In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 389-393, p. 537-540Article in journal (Refereed)
    Abstract [en]

    A full band Monte Carlo study of the electron transport in 3C-SiC is presented based on ab initio band structure calculation using the Local Density Approximation (LDA) to the Density Functional Theory (DFT). The scattering rates and impact ionization transition rates have been calculated numerically from the band structure using both energy dispersion and wave functions. Coupling constants for the phonon interactions have been deduced by fitting the simulated mobility as a function of lattice temperature to experimental data. The saturation velocity was found to be approximately 2.2*107 cm/s with a visible negative differential mobility above 600 kV/cm. The electron initiated impact ionization coefficients were found to be 2 to 10 times stronger than reported values for the hole initiated impact ionization

  • 3.
    Nilsson, Hans-Erik
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Englund, U
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Hjelm, Mats
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Belotti, E
    Brennan, K
    Full band Monte Carlo study of high field transport in cubic phase silicon carbide2003In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 6, p. 3389-3394Article in journal (Refereed)
    Abstract [en]

    A full band Monte Carlo study of the electron transport in 3C-SiC is presented based on an ab initio band structure calculation using the local density approximation to the density functional theory. The scattering rates and impact ionization transition rates have been calculated numerically from the ab initio band structure using both energy dispersion and numerical wave functions. This approach reduces the number of empirical parameters needed to a minimum. The two empirical coupling constants used have been deduced by fitting the simulated mobility as a function of lattice temperature to experimental data. The peak velocity was found to be approximately 2.2*107 cm/s with a clear negative differential mobility above 600 kV/cm. The electron initiated impact ionization coefficients were found to be 2-10 times stronger than the reported values for the hole initiated impact ionization

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