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  • 1. Bakowski, M
    et al.
    Gustafsson, U
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Simulation of SiC high power devices1997In: Physica Status Solidi A, ISSN 0031-8965, Vol. 162, no 1, p. 421-440Article in journal (Refereed)
  • 2. Bergman, J.P.
    et al.
    Lendenmann, H
    Nilsson, P-Å
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Skytt, P
    Crystal defects as source of anomalous forward voltage increase of 4H SiC diodes2001In: 3rd European Conference on Silicon Carbide and Related Materials KLOSTER BANZ, GERMANY, SEP, 2000, 2001, p. 299-302Conference paper (Refereed)
  • 3. Galeckas, A
    et al.
    Linnros, J
    Grivickas, V
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Hallin, C
    Auger recombination in 4H-SiC: Unusual temperature behavior1997In: Applied Physics Letters, ISSN 0003-6951, Vol. 71, no 22, p. 3269-3271Article in journal (Refereed)
  • 4. Galeckas, A
    et al.
    Linnros, J
    Grivickas, V
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Hallin, C
    Evaluation of Auger recombination rate in 4H-SiC1998In: Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII.: Part 1 (of 2), Sep 31-Sep 5 1997, Stockholm, Sweden, 1998, p. 533-536Conference paper (Refereed)
  • 5. Grivickas, P
    et al.
    Martinez, A
    Mikulskas, I
    Grivickas, V
    Tomasiunas, R
    Linnros, J
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Free Carrier Diffusion in 4H-SiC2001In: Materials Science Forum, ISSN 0255-5476, Vol. 353/356, p. 353-356Article in journal (Refereed)
  • 6. Gustafsson, U
    et al.
    Bakowski, M
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Static and dynamic properties of 4.5 kV MOSFETs in 4H and 6H SiC - Simulation study1996In: Proceedings of International Conference on Silicon Carbide and Related Materials, 18-21 Sept. 1995 , Kyoto, Japan, 1996, p. 793-796Conference paper (Other scientific)
  • 7. Henry, A
    et al.
    Hallin, C
    Ivanov, I.G.
    Bergman, J.P.
    Kordina, O
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Janzén, E
    Ga-bound excitons in 3C-, 4H-, and 6H-SiC1996In: Physical Review B (Condensed Matter), ISSN 0163-1829, Vol. 53, no 20, p. 13503-13506Article in journal (Refereed)
  • 8. Henry, A
    et al.
    Ivanov, I.G:
    Egilsson, T
    Hallin, C
    Ellison, A
    Kordina, O
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Janzén, E
    High quality 4H-SiC grown on various substrate orientations1997In: First European Conference on Silicon Carbide and Related Materials (ECSCRM 96), 6-9 Oct. 1996 , Heraklion, Greece, 1997, p. 1289-1292Conference paper (Refereed)
  • 9. Henry, A
    et al.
    Ivanov, I.G.
    Egilsson, T
    Hallin, C
    Kordina, O
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Janzén, E
    High quality 4H-SiC grown on various substrate orientations1996In: Diamond and Related Materials, v 6, n 10, Aug. 1997, 1289-92, ISSN 0925-9635, Vol. 6, no 10, p. 1289-1292Article in journal (Refereed)
  • 10.
    Hjelm, Mats
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Martinez, A.
    University of Glasgow, United Kingdom.
    Nilsson, Hans-Erik
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Interband tunneling description of holes in Wurtzite GaN at high electric fields2007In: Journal of Computational Electronics, ISSN 1569-8025, E-ISSN 1572-8137, Vol. 6, no 1-3, p. 163-166Article in journal (Refereed)
    Abstract [en]

    We have studied the time evolution of an ensemble of holes in Wurtzite GaN under the effect of a high electric field. The density matrix equation used as a foundation in the study includes band-to-band tunneling, but disregards collisions. In the description of the ensemble dynamics the full band structure is used. The average energy and group velocity for the ensemble is calculated, as well as velocity components corresponding to the non-diagonal elements of the velocity operator (interference). The calculations have been carried out for the electric field strengths 0.4 and 4 MV/cm. A comparison is presented of the results with and without inclusion of band tunneling in the ensemble dynamics. There is also a comparison of the velocity with and without the non-diagonal elements of the velocity operator terms. A conclusion is that Monte Carlo simulations considering band tunneling, but not interference, can give accurate results.

  • 11. Hongqi, Xu
    et al.
    Lindefelt, Ulf
    Deep levels due to vacancy pairs in silicon1989In: International Journal of Modern Physics B, ISSN 0217-9792, Vol. 3, no 6, p. 863-870Article in journal (Refereed)
  • 12. Hongqi, Xu
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Electronic structure of vacancy-phosphorus impurity complexes in silicon1990In: Symposium at the 1989 fall meeting of Materials research society: Boston, MA, nov 27-dec 01 1989, 1990, p. 287-290Conference paper (Refereed)
  • 13. Ivanov, I.G.
    et al.
    Henry, A
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Egilsson, T
    Kordina, O
    Hallin, C
    Monemar, B
    Janzén, E
    Phonon energies at the M-point in 4H-SiC1996In: 23rd International Conference on the Physics of Semiconductors, vol. 1: 21-26 July 1996 , Berlin, Germany, 1996, p. 233-236Conference paper (Other scientific)
  • 14. Ivanov, I.G.
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Henry, A
    Egilsson, T
    Kordina, O
    Janzén, E
    Changes in the exciton-related photoluminescence of 4H- and 6H-SiC induced by uniaxial stress1998In: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97) STOCKHOLM, SWEDEN, AUG 31-SEP 05, 1997, 1998, p. 489-492Conference paper (Refereed)
  • 15. Ivanov, I.G.
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Henry, A
    Kordina, O
    Hallin, C
    Aroyo, M
    Egilsson, T
    Janzen, E
    Phonon replicas at the M-point in 4H-SiC: A theoretical and experimental study1998In: Physical Review B (Condensed Matter), ISSN 0163-1829, Vol. 58, no 20, p. 13634-13647Article in journal (Refereed)
  • 16. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    A new type of quantum wells: Stacking faults in SiC2003In: Microelectronics Journal, ISSN 0026-2692, Vol. 34, no 5-8, p. 371-374Article in journal (Refereed)
  • 17. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Cubic Polytype inclusions in 4H-SiC2003In: Journal of Applied Physics, ISSN 0021-8979, Vol. 93, no 3, p. 1577-1585Article in journal (Refereed)
  • 18. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Effective Mass of Electrons in Quantum-Well-Like Stacking Fault Gap States in Silicon Carbide2003In: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002) LINKOPING, SWEDEN, SEP 02-25, 2002, 2003, p. 519-522Conference paper (Refereed)
  • 19. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R
    Electronic Localization around Stacking Faults in Silicon Carbide2002In: International Conference on Silicon Carbide and Related Materials TSUKUBA, JAPAN, OCT 28-NOV 02, 2001, 2002, p. 529-532Conference paper (Refereed)
  • 20. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Electronic Properties of Stacking Faults in 15R-SiC2003In: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002) LINKOPING, SWEDEN, SEP 02-25, 2002, 2003, p. 531-534Conference paper (Refereed)
  • 21. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond2003In: Proceedings of the 4th European Conference on Silicon Carbide and Related Materials, Sep 2-5 2002, Linkoping, Sweden, 2003, p. 527-530Conference paper (Refereed)
  • 22. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Localized Electronic States around Stacking Faults in Silicon Carbide2002In: Physical Review B (Condensed Matter and Materials Physics), ISSN 0163-1829, Vol. 65, no 3, p. 0332303-1Article in journal (Refereed)
  • 23. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Stacking Fault-Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: An Ab Initio Study2003In: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002) LINKOPING, SWEDEN, SEP 02-25, 2002, 2003, p. 921-924Conference paper (Refereed)
  • 24. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Theoretical Calculation of Stacking Fault Energies in Silicon Carbide2002In: International Conference on Silicon Carbide and Related Materials TSUKUBA, JAPAN, OCT 28-NOV 02, 2001, 2002, p. 439-442Conference paper (Refereed)
  • 25. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Theoretical Study of Planar Defects in Silicon Carbide2002In: Journal of Physics (Condensed Matter), ISSN 0953-8984, Vol. 14, no 48, p. 12733-12740Article in journal (Refereed)
  • 26. Iwata, H
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Theoretical Study of Polytype Inclusions in 4H-SiC2002In: International Conference on Silicon Carbide and Related Materials TSUKUBA, JAPAN, OCT 28-NOV 02, 2001, 2002, p. 533-536Conference paper (Refereed)
  • 27. Iwata, H.P.
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R.
    Ab initio study of 3C inclusions and stacking fault-stacking fault interactions in 6H-SiC2003In: Journal of applied physics, ISSN 0021-8979, Vol. 94, no 8, p. 4972-4979Article in journal (Refereed)
  • 28. Iwata, H.P
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R
    Effective masses of two-dimensional electron gases around cubic inclusions in hexagonal silicon carbide2003In: Physical Review B (Condensed Matter and Materials Physics), ISSN 0163-1829, Vol. 68, no 24, p. 245309-1Article in journal (Refereed)
  • 29. Iwata, H.P.
    et al.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Öberg, S
    Briddon, P.R
    Energies and electronic properties of isolated and interacting twin boundaries in 3C-SiC, Si and diamond2003In: Physical Review B (Condensed Matter and Materials Physics), ISSN 0163-1829, Vol. 68, no 11, article id 113202Article in journal (Refereed)
  • 30. Jacobson, H
    et al.
    Birch, J
    Hallin, C
    Henry, A
    Yakimova, T
    Tuomi, T
    Janzén, E
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Doping-induced strain in N-doped 4H-SiC crystals2003In: Applied Physics Letters, ISSN 0003-6951, Vol. 82, no 21, p. 3689-3691Article in journal (Refereed)
  • 31. Jacobson, H
    et al.
    Birch, J
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Hallin, C
    Henry, A
    Yakimova, R
    Janzén, E
    Doping-Related Strain in n-Doped 4H-SiC Crystals2003In: Silicon Carbide and Related Materials 2002. ECSCRM 2002. 4th European Conference on Silicon Carbide and Related Materials, 2-5 Sept. 2002 , Linkoping, Sweden, 2003, p. 269-272Conference paper (Refereed)
  • 32. Johansson, L.I.
    et al.
    Owman, F
    Mårtensson, P
    Persson, C
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Electronic structure of 6H-SiC(0001)1996In: Physical Review B (Condensed Matter), ISSN 0163-1829, Vol. 53, no 20, p. 13803-13807Article in journal (Refereed)
  • 33. Konstantinov, A.O.
    et al.
    Nordell, N
    Wahan, Q
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide1998In: Applied Physics Letters, ISSN 0003-6951, Vol. 73, no 13, p. 1850-1852Article in journal (Refereed)
  • 34. Konstantinov, A.O.
    et al.
    Wahab, Q
    Nordell, N
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Ionization rates and critical fields in 4H Silicon Carbide1997In: Applied Physics Letters, ISSN 0003-6951, Vol. 71, no 1, p. 90-92Article in journal (Refereed)
  • 35. Konstantinov, A.O.
    et al.
    Wahab, Q
    Nordell, N
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Ionization rates and critical fields in 4H-SiC junction devices1998In: Silicon Carbide, III-Nitrides and Related Materials. 7th International Conference, 31 Aug.-5 Sept. 1997 , Stockholm, Sweden: pt.1, 1998, p. 513-516Conference paper (Refereed)
  • 36. Kordina, O
    et al.
    Bergman, J.P.
    Henry, A
    Janzén, E
    Savage, S
    André, J
    Ramberg, L.P.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Hermansson, W
    Bergman, K
    A 4.5 kV 6H silicon carbide rectifier1995In: Applied Physics Letters, ISSN 0003-6951, Vol. 67, no 11, p. 1561-1563Article in journal (Refereed)
  • 37.
    Lindefelt, Ulf
    Lunds universitet.
    A large unit cell approach to the theory of deep level impurities1977In: Journal of Physics C (Solid State Physics), ISSN 0022-3719, Vol. 11, no 1, p. 85-100Article in journal (Refereed)
  • 38.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    A model for doping-induced bandgap narrowing in 3C-, 4H-, and 6H-SiC1999In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ISSN 0921-5107, Vol. B61-62, no jul, p. 225-228Article in journal (Refereed)
  • 39.
    Lindefelt, Ulf
    Lunds universitet.
    A study of the neutral undistorted vacancy in silicon1978In: Journal of Physics C (Solid State Physics), ISSN 0022-3719, Vol. 11, no 17, p. 3651-3608Article in journal (Refereed)
  • 40.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Current-density relations for nonisothermal modeling of degenerate heterostructure devices1994In: Journal of applied physics, ISSN 0021-8979, Vol. 75, no 2, p. 958-966Article in journal (Refereed)
  • 41.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Doping-induced band edge displacements and band gap narrowing in 3C-, 4H- 6H-SiC and Si1998In: Journal of applied physics, ISSN 0021-8979, Vol. 84, no 5, p. 2628-2637Article in journal (Refereed)
  • 42.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Equations for electrical and electrothermal simulation of anisotropic semiconductors1994In: Journal of applied physics, ISSN 0021-8979, Vol. 76, no 7, p. 4164-4167Article in journal (Refereed)
  • 43.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Heat generation in semiconductor devices1994In: Journal of Applied Physics, ISSN 0021-8979, Vol. 75, no 2, p. 942-957Article in journal (Refereed)
  • 44.
    Lindefelt, Ulf
    Lunds universitet.
    Methods for theoretical studies of the electronic structure of deep level impurities in semiconductors1979Doctoral thesis, monograph (Other academic)
  • 45.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Regularities in the conductance for armchair and metallic zigzag carbon nanotubes with separated vacancy pairsManuscript (preprint) (Other academic)
    Abstract [en]

    Using quantum transport theory in conjunction with a tight-binding description of the electron interactions with the lattice, we have mapped out the variations in the conductance in single-wall carbon nanotubes when the two vacancies in a well-separated vacancy pair assume all different relative positions. The investigations have been performed for armchair and metallic zigzag carbon nanotubes. It is found that only a very limited number of basically different conductance spectra exist, and that much of the results concerning how the conductance depends on the intervacancy separation can be interpreted in terms of a simple one-dimensional double-barrier scattering model. The total conductance is also analyzed in terms of its constituent eigenchannels to provide additional insight into the conduction mechanism. For instance, eigenchannels can be either totally unperturbed, contain double-barrier scattering resonances, Fano anti-resonances, or be completely blocking in a narrow energy interval, depending on the exact relative positions of the vacancies. Furthermore, and in accordance with experiments, it is found that the region bounded by the two vacancies in a separated vacancy pair can alternatively be regarded as a quantum dot similar to that defined by a semiconductor-metal-semiconductor heterojunction nanotube.

  • 46.
    Lindefelt, Ulf
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Resonances and rotation symmetries in the conductance of armchair carbon nanotubes with extended defect pairs2005In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 72, no 15, p. 153405-1Article in journal (Refereed)
    Abstract [en]

    The influence on the conductance of armchair carbon nanotubes due to the presence of extended vacancy pairs has been investigated using a conventional pi-electron tight-binding model. It is found that the conductance in the linear band region around the Fermi energy contains resonance peaks and dips, which can be understood as double-barrier scattering resonances and Fano antiresonances and whose number depends on the longitudinal intervacancy separation. Furthermore, for a given longitudinal intervacancy separation, only two distinctly different conductance spectra appear in this energy region as the second vacancy in the pair assumes all different lateral positions around the tube circumference. It is also found that the conductance can be very sensitive to minimal changes in the relative intervacancy positions.

  • 47. Lindefelt, Ulf
    Symmetric lattice distortions around deep-level impurities in semiconductors: Vacancy and substitutional Cu in silicon1983In: Physical Review B (Condensed Matter), ISSN 0163-1829, Vol. 28, no 8, p. 4510-4518Article in journal (Refereed)
  • 48.
    Lindefelt, Ulf
    Lunds universitet.
    The localized vacancy state in Ge1979In: Journal of Physics C (Solid State Physics), ISSN 0022-3719, Vol. 12, no 11, p. L419-L423Article in journal (Refereed)
  • 49.
    Lindefelt, Ulf
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Iwata, H
    Electronic properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes2004In: Silicon Carbide: recent major advances, Berlin: Springer, 2004, p. 89-118Chapter in book (Other academic)
  • 50.
    Lindefelt, Ulf
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Iwata, H
    Öberg, S
    Briddon, P.R
    Insight into the Degradation Phenomenon in SiC Devices from ab initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults2003In: Silicon Carbide and Related Materials 2002. ECSCRM 2002. 4th European Conference on Silicon Carbide and Related Materials, 2-5 Sept. 2002 , Linkoping, Sweden, 2003, p. 907-912Conference paper (Refereed)
123 1 - 50 of 101
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