A search with the ATLAS detector is presented for the Standard Model Higgs boson produced by vector-boson fusion and decaying to a pair of bottom quarks, using 20.2 fb−1 of LHC proton-proton collision data at s=8" role="presentation" style="box-sizing: border-box; display: inline-table; line-height: normal; letter-spacing: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">s√=8s=8 TeV. The signal is searched for as a resonance in the invariant mass distribution of a pair of jets containing b-hadrons in vector-boson-fusion candidate events. The yield is measured to be −0.8 ± 2.3 times the Standard Model cross-section for a Higgs boson mass of 125 GeV. The upper limit on the cross-section times the branching ratio is found to be 4.4 times the Standard Model cross-section at the 95% confidence level, consistent with the expected limit value of 5.4 (5.7) in the background-only (Standard Model production) hypothesis.
A current renaissance of lunar exploration enables to search for lunar water deposits directly on the surface of the Moon with robotic rovers. We present a novel miniature semiconductor neutron spectrometer capable of mapping the water deposits using non-invasive detection of neutrons created underground by cosmic rays and thermalized by hydrogen. This prospecting package consists of a radiation detector to monitor the cosmic rays background, a thermal/epithermal neutron detector to measure flux of neutrons moderated by water, and a gamma spectrometer suitable for monitoring local changes of major elemental components of the lunar regolith. Using miniature semiconductor detectors allows to deploy them even on small commercial rovers where resources are extremely limited. The prospecting package is being developed for ispace lunar rover and studied for ESA EL3 rover. It is based on Timepix pixel sensors, with space heritage onboard NASA, ESA and JAXA vessels.
Al2O3 has emerged as the surface passivation material of choice for p-type silicon in photovoltaics and has also become a candidate for passivating Si-based radiation sensors. However, the surface passivation of Al2O3 has been shown to degrade when exposed to gamma-radiation, making it of interest to determine methods of depositing Al2O3 that minimize the radiation-induced degradation on the surface passivation. In this study, we investigate the long-term stability and gamma-radiation hardness of Al2O3 prepared using the TMA+H2O+O3 precursor combination and how the pretreatment, the deposition temperature, and the film thickness affect the density of interface states, Dit, and fixed oxide charge, Qfix, before and after gamma-irradiation. We find that the surface saturation current density, J0s, of silicon passivated by Al2O3 increases after annealing but stabilizes over time depending on the Al2O3 thickness. Samples with thicknesses of <20 nm stabilize within hours, while those with >60 nm stabilize over days. J0s stabilizes at lower values with increased Al2O3 thickness. After exposure to 1 Mrad gamma-radiation, the samples still exhibit low Dit and high Qfix, with the best performing sample having a Dit of 1.5 × 1010 eV−1 cm−2 and a Qfix of −3.1 × 1012 cm−2. The deposition temperature appears to indirectly affect radiation hardness, owing to its impact on the hydrogen concentration in the film and at the Si–SiOx–Al2O3 interface. Lifetime measurements after irradiation indicate that Al2O3 still passivates the surface effectively. The carrier lifetime and Qfix can largely be recovered by annealing samples in O2 at 435 °C.
The recent availability of large volume cerium bromide crystals raises the possibility of substantially improving gamma-ray spectrometer limiting flux sensitivities over current systems based on the lanthanum tri-halides, e.g., lanthanum bromide and lanthanum chloride, especially for remote sensing, low-level counting applications or any type of measurement characterized by poor signal to noise ratios. The Russian Space Research Institute has developed and manufactured a highly sensitive gamma-ray spectrometer for remote sensing observations of the planet Mercury from the Mercury Polar Orbiter (MPO), which forms part of ESA’s BepiColombo mission. The Flight Model (FM) gamma-ray spectrometer is based on a 3-in. single crystal of LaBr3(Ce3+) produced in a separate crystal development programme specifically for this mission. During the spectrometers development, manufacturing, and qualification phases, large crystals of CeBr3 became available in a subsequent phase of the same crystal development programme. Consequently, the Flight Spare Model (FSM) gamma-ray spectrometer was retrofitted with a 3-in. CeBr3 crystal and qualified for space. Except for the crystals, the two systems are essentially identical. In this paper, we report on a comparative assessment of the two systems, in terms of their respective spectral properties, as well as their suitability for use in planetary mission with respect to radiation tolerance and their propensity for activation. We also contrast their performance with a Ge detector representative of that flown on MESSENGER and show that: (a) both LaBr3(Ce3+) and CeBr3 provide superior detection systems over HPGe in the context of minimally resourced spacecraft and (b) CeBr3 is a more attractive system than LaBr3(Ce3+) in terms of sensitivities at lower gamma fluxes. Based on the tests, the FM has now been replaced by the FSM on the BepiColombo spacecraft. Thus, CeBr3 now forms the central gamma-ray detection element on the MPO spacecraft. Published by AIP Publishing.
Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process. © 2012 IOP Publishing Ltd and SISSA.
Neutron detection is of great importance in many fields spanning from scientific research, to nuclear science, and to medical application. The development of silicon-based neutron detectors with enhanced neutron detection efficiency can offer several advantages such as spatial resolution, enhanced dynamic range and background discrimination. In this work, increased detection efficiency is pursued by fabricating high aspect ratio 3D micro-structures filled with neutron converting materials (B4C) on planar silicon detectors. An in-depth feasibility study was carried out in all aspects of the sensor fabrication technology. Passivation of the etched structures was studied in detail, to ensure good electrical performance. The conformal deposition of B4C with a newly developed process showed excellent results. Preliminary electrical characterisation of the completed devices is promising, and detectors have been mounted on dedicated boards in view of the upcoming tests with neutrons.
Minimizing the fiber property distribution would have the potential to improve the pulp properties and the process efficiency of chemimechanical pulp. To achieve this, it is essential to improve the level of knowledge of how evenly distributed the sulfonate concentration is between the individual chemimechanical pulp fibers. Due to the variation in quality between pulpwood and sawmill chips, as well as the on-chip screening method, it is difficult to develop an impregnation system that ensures the even distribution of sodium sulfite (Na2SO3) impregnation liquid. It is, therefore, crucial to measure the distribution of sulfonate groups within wood chips and fibers on a microscale. Typically, the degree of unevenness, i.e., the amount of fiber sulfonation and softening prior to defibration, is unknown on a microlevel due to excessively robust or complex processing methods. The degree of sulfonation at the fiber level can be determined by measuring the distribution of elemental sulfur and counterions of sulfonate groups, such as sodium or calcium. A miniaturized energy-dispersive X-ray fluorescence (ED-XRF) method has been developed to address this issue, enabling the analysis of sulfur distributions. It is effective enough to be applied to industrial laboratories for further development, i.e., improved image resolution and measurement time.
This paper presents the calibration of two different kinds of image plates (IPs) for detecting electrons with kinetic energy in the range of 150 keV-1.75 MeV. The calibration was performed using a Sr-90 beta source. The paper also provides the measured fading response for the IPs in the time range from 12 min to 18 h. Calibration results are compared to Monte Carlo simulations of energy deposited by the electrons in the sensitive layer of the IPs. It was found that within this energy range a linear relation between simulated energy deposited by the electron in the phosphor layer and the measured photo stimulated luminescence in the IP is adequate to model the response of the IP.
Disasters involving radioactive materials are one of the most dangerous accidents a living organism can be exposed to. Individuals and first responders are in risk during accidents or interventions, due to radioactive debris impact, due to the use of depleted uranium ammunition or a malevolent act against individuals. Moreover, radioactive contamination of wounds causes internal exposure in the body and standard decontamination procedures cannot be applied. In order to deal with such situations, we are developing a measurement system consisting of a robotic arm, an array of various detectors and a corresponding methodology, which allows quantifying timely the spatial distribution of contamination and the radiation dose for the adequate medical response. The aim of this publication is to the present current status of the development of the described apparatus.
Neutron radiation as a non-ionizing radiation is particularly difficult to detect; therefore a conversion material is required. The conversion material converts neutrons into secondary charged particles in order for them to be detected in a silicon detector. The use of titanium diboride (TiB 2) as the conversion material deposited by an electron beam-physical vapour deposition (EB-PVD) as a part of a front-side contact of a planar silicon detector is presented. The effect of different front-side contact material compositions is discussed. The detectors behaviour was examined using alpha particles and thermal neutrons from an 241Am-Be source. Simultaneously, a Geant4 simulation was so as executed to evaluate the conversion layer functionality and to discover the conversion material thickness for the best neutron detection efficiency. © 2012 IOP Publishing Ltd and SISSA.
Silicon carbide (SiC) devices have gained much attention owing to their superior characteristics that make them high-temperature and radiation-hard. The advantage of the SiC arises from its unique combination of electronic and physical properties such as a wide band-gap, high breakdown electric field strength, high saturated electron velocity, and high thermal conductivity. The wide band-gap results in a low intrinsic charge carrier concentration and a radiation hardness. The low intrinsic charge carrier concentration leads to low device leakages at high temperature. The high breakdown strength allows SiC devices to operate at much higher voltages. The aim of this publication is to present current status of a charged particle spectrometer based on a SiC strip detector. The sensor is made of a 4H-SiC (-SiC) hexagonal crystalline structure material which manifests good spectroscopic characteristics for charged particle detection similar to a standard silicon diode (20 keV FWHM with 5,4857MeV 241Am alpha particle). To obtain sensors for the charged particle detection out of the SiC bulk material we created Schottky contacts on the top and the Ohmic contact on the bottom. Preparation of the contacts will be discussed alongside the electric characterization of the sensor material. Results of the charged particle and the gamma detection and detection of thermal neutron detection (after a neutron converter deposition) will be presented. There will be also a discussion regarding fast neutron detection. The SiC sensor material was attached to a VATA GP8 based 128 strip readout to form the handheld spectrometer which will be demonstrated.
A gamma-ray detector composed of a single 28×28×20 mm3 LaBr3:Ce crystal coupled to a custom built 4×4 array of silicon photomultipliers was tested over an energy range of 30 keV to 9.3 MeV. The silicon photomultipliers were initially calibrated using 20 ns light pulses generated by a light emitting diode. The photodetector responses measured as a function of the number of incident photons were found to be non-linear and consistent with model predictions. Using corrections for the non-linearity of the silicon photomultipliers, the detector showed a linear response to gamma-rays with energies from 100 keV to the maximum available energy of 9.3 MeV. The energy resolution was found to be 4% FWHM at 662 keV. Despite the large thickness of the scintillator (20 mm) and a 5 mm thick optical window, the detector was capable of measuring the positions of the gamma-ray interaction points. The position resolution was measured at 356 keV and was found to be 8 mm FWHM in the detector plane and 11 mm FWHM for the depth of interaction. The detector can be used as a building block of a larger calorimeter system that is capable of measuring gamma-ray energies up to tens of MeV.