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  • 1.
    Dubaric, Ervin
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Nilsson, Hans-Erik
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Petersson, Sture
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Numerical modelling of the floating body enhanced breakdown in ultra small non-fully depleted SOI MOSFETs1999In: Physica scripta. T, ISSN 0281-1847, Vol. T79, p. 311-313Article in journal (Refereed)
  • 2.
    Fröjdh, Christer
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Thungström, Göran
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Hatzikonstantinidou, S.
    Nilsson, Hans-Erik
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Petersson, Sture
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Processing and characterisation of an etched groove Permeable1994In: Physica scripta. T, ISSN 0281-1847, Vol. T54, p. 56-59Article in journal (Refereed)
    Abstract [en]

    The Permeable Base Transistor (PBT) is generally considered as an interesting device for high speed applications. PBTs have been fabricated on Silicon and Gallium Arsenide by a number of groups. In this paper we reported on the fabrication of an etched groove PBT structure on 6H-SiC using Ti as contact metal for all electrodes. The devices have been characterised by DC-measurements. The transistors show the normal IV-characteristics for a such a device except for a parasitic series diode at the drain electrode. The breakdown voltage of the gate-drain diode is generally as high as around 60 V even without passivation of the sidewalls of the grooves.

  • 3.
    Fröjdh, Christer
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Thungström, Göran
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Nilsson, Hans-Erik
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Petersson, Sture
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Schottky Barriers on 6H-SiC1999In: Physica scripta. T, ISSN 0281-1847, Vol. T79, p. 297-302Article in journal (Refereed)
    Abstract [en]

    Schottky diodes have been fabricated by deposition of Ti, Ni, Cu on epitaxial layers of p-type and n-type 6H-SiC. The fabricated devices have been characterised by CV, IV and photoelectric measurements. The results from the different characterisations are compared. The effect of incomplete ionisation of dopants and high series resistance on the results from CV-measurements is discussed.

    In addition to the results obtained from the experiments presented in this paper data has also been collected from other research groups in order to investigate the mechanism of Schottky barrier formation on Silicon Carbide. The results show that for a number of metals the barrier height is strongly correlated to the difference between the electron affinity of the semiconductor and the metal work function, while other metals show significant deviation from the Schottky-Mott theory.

  • 4.
    Fröjdh, Christer
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Thungström, Göran
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Nilsson, Hans-Erik
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Petersson, Sture
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    UV-sensitive photodetectors based on metal-semiconductor contacts on 6H-SiC1994In: Physica scripta. T, ISSN 0281-1847, Vol. T54, p. 169-171Article in journal (Refereed)
  • 5.
    Glans, Peter
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Engineering, Physics and Mathematics.
    Fogle, M.
    Stockholm University.
    Madzunkov, S.
    Stockholm University.
    Tokman, M.
    Stockholm University.
    Nikolic, D.
    Stockholm University.
    Mohamed, T.
    Stockholm University.
    Eklöw, N.
    Stockholm University.
    Badnell, N.R.
    University of Strathclyde, United Kingdom.
    Lindroth, E.
    Stockholm University.
    Schuch, R.
    Stockholm University.
    Dielectronic recombination used as a tool for spectroscopic studies of highly charged ions2004In: Physica scripta. T, ISSN 0281-1847, Vol. T110, p. 212-215Article in journal (Refereed)
    Abstract [en]

    Systematic studies of electron-ion recombination for Li-like, Na-like, and Cu-like ions have been made during the last few years at the CRYRING facility. The main purpose has been to measure recombination spectra with such high resolution and accuracy that stringent tests of advanced atomic calculations of doubly excited states can be made. From the comparison with theory it is possible to obtain energy positions, as well as radiative and nonradiative decay rates for the doubly excited states. In addition, for heavy, highly charged ions it is possible to deduce radiative corrections for energy splittings with very high accuracy.

  • 6. Hatzikonstantinidou, S.
    et al.
    Nilsson, Hans-Erik
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Fröjdh, Christer
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Petersson, Sture
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Process Optimisation and Characterisation of PBT structures1994In: Physica scripta. T, ISSN 0281-1847, Vol. T54, p. 226-229Article in journal (Refereed)
    Abstract [en]

    The Permeable Base Transistor (PBT) is considered to be a high frequency device with simulated fT and fmax values in the order of 100 GHz. In this work we present several PBT devices in silicon. The fabrication process steps have been developed and optimised in order to meet the demands of a future integration in a standard CMOS processing. Cobalt disilicide is used for the emitter metallization and base metallisation in order to form a good Schottky contact. The important issues of a fabrication process reliability and controllability are discussed in this paper. The process steps had been analysed by standard analysis methods. Electrical (DC) characterisation of the devices has been performed. The obtained results are in a good agreement with the 2D simulations.

  • 7.
    Nilsson, Hans-Erik
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Sannemo, Ulf
    Petersson, Sture
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    A semi-analytic model of the Permeable Base Transistor1994In: Physica scripta. T, ISSN 0281-1847, Vol. T54, p. 159-164Article in journal (Refereed)
    Abstract [en]

    The I-V characteristics of the Permeable Base Transistor (PBT) has been investigated in order to find a simple and practical model for use in circuit designs. Two possible approaches has been discussed, a one-dimensional analytical solution and a semi-analytical solution mixing analytical and empirical methods. The semi-analytical model developed in this paper offers high accuracy and a simple and fast evaluation. All model parameters can be extracted from a set of I-V curves from two typical transistors with different threshold voltages. An analytical small signal model has been developed that agrees very well with two-dimensional simulations.

  • 8.
    Nilsson, Hans-Erik
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Sannemo, Ulf
    Petersson, Sture
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Different methods of noise reduction in Monte Carlo simulations of a Schottky diode1994In: Physica scripta. T, ISSN 0281-1847, Vol. T54, p. 268-272Article in journal (Refereed)
    Abstract [en]

    Methods of decreasing the noise and increasing the computational efficiency in Monte Carlo simulations of semiconductor devices are investigated. A lookup table approach to the charge assignment to mesh points has been implemented which is independent of the complexity of the assignment function. Using this approach reduces the CPU time of the charge assignment to about one third. Potential fluctuations in low field regions are compared for different assignment function, which shows the advantage of using more complex schemes than those generally used. Results from a full band Monte Carlo simulation of a submicron Schottky diode are presented and the values of the current density for different assignment schemes are compared, showing a lower noise for the higher order schemes. Statistical enhancements by splitting of superparticles in the depletion region has been investigated. The combination of a high order assignment scheme and statistical enhancement by splitting decreases simulation runtimes considerable for a given noise tolerance.

  • 9.
    Thungström, Göran
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Fröjdh, Christer
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Svedberg, P.
    Petersson, Sture
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Contacts to Monocrystalline N- and P-type Silicon by Wafer Bonding Using1994In: Physica scripta. T, ISSN 0281-1847, Vol. T54, p. 77-80Article in journal (Refereed)
    Abstract [en]

    Contacts to monocrystalline silicon have been prepared by wafer bonding using cobalt disilicide as an interfacial layer. Bonding has been carried out with three different structures: n+ -CoSi2-n+, p+ -CoSi2-p+ and p+ -CoSi2-n+. The intermediate cobalt disilicide layers had a thickness of either 700 Å or 5250 Å. The bonding interface was characterized by electrical measurement (IV) and Secondary-ion mass spectrometry (SIMS) of the formed contacts. The n+ -CoSi2-n+ and p+ -CoSi2-p+ bondings display an ohmic behaviour. The resistance of the bonded structures was in the range expected for the bulk silicon used (0.1-0.05 Ω cm). The p+ -CoSi2-n+ structures shows a non ohmic behaviour. An evaluation of the SIMS profiles reveals that the non-linear behaviour of the p+ -CoSi2-interface is due to phosphorous diffusion from the n-doped region across the silicide to the p-doped area. It is shown that the phosphorous compensates the boron dopant.

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