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  • 1.
    Auzel, Francois
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Balda, R.
    Universidad del Pais Vasco, Bilbao, Spain.
    Fernadez, J.
    Universidad del Pais Vasco, Bilbao, Spain.
    Homogeneous line width of rare-earth-doped glasses for levels in a Stark level ladder: A new simple rule2007In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 122, no 1-2, p. 453-455Article in journal (Refereed)
    Abstract [en]

    Concentrating on higher Stark states in multiplet ladders of lanthanide-doped glasses, we show that at 10 K, the homogeneous widths along Stark ladders vary quasi-linearly with the energy position in the ladder.

    Assuming that the mechanisms creating the homogeneous widths are first-order processes, either direct processes or two-phonon nonradiative transitions, the observed behavior is simply explained by the fact that energy separations between Stark levels for usual glasses are less, i.e., not far from kT(D), the Debye energy. This in turn provides quasi-equal phonon transition probabilities between individual Stark states. A simple theoretical relationship is derived and compared with experiments.

  • 2.
    Auzel, Francois
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
    Baldacchini, Giuseppe
    ENEA, Department of Advanced Physical Technologies, Rome, Italy.
    Photon trapping in ruby and lanthanide-doped materials: Recollections and revival2007In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 125, no 1-2, p. 25-30Article in journal (Refereed)
    Abstract [en]

    After some recollections of phonon and photon trapping in ruby, a critical review of this effect of renewed interest in trivalent lanthanide-doped materials is presented showing that the two independent derivations taking their roots in the work of Milne for gases and of Birks for organic scintillators are practically described by an analogous phenomenological equation when re-absorption is weak. The problem of obtaining "extrinsic" quantum efficiency larger than one is briefly discussed.

  • 3. Monemar, B
    et al.
    Lindefelt, Ulf
    Pistol, M.E.
    Magnetic properties of bound hole states for complex neutral defects in semiconductors1986In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 36, no 3, p. 149-159Article in journal (Refereed)
    Abstract [en]

    The magnetic properties of an electron-hole pair bound to complex neutral defects in semiconductors are discussed and compared to experimental data for both direct- and indirect-bandgap materials. The properties of bound hole states for such defects are discussed in a general formalism, which avoids the generally inadequate effective-mass-like description often used in previous literature. In the case of low symmetry defects with a dominantly hole-attractive local potential the primary bound hole state is often nondegenerate and shows a spin-like character with a quenched angular momentum. This case has recently been demonstrated experimentally for a large number of defects in GaP and Si. A strong spin-orbit interaction may inhibit such a quenching so that the bound hole angular momentum is at least partly retained. This situation often prevails for complex defects in materials like CdTe and ZnTe, where the valence band spin-orbit splitting Δso is large. For electron-attractive central cell potentials, the bound hole state is generally effective-mass-like, and retains its anisotropic magnetic behaviour due to the hole angular momentum. Experimental data supporting this situation are also demonstrated, for both Si and compound semiconductors.

     

     

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