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  • 1.
    Hepworth, Jo
    et al.
    Norwich Research Park, Norwich, UK.
    Antoniou-Kourounioti, Rea L.
    Norwich Research Park, Norwich, UK.
    Bloomer, Rebecca H.
    Norwich Research Park, Norwich, UK.
    Selga, Catja
    Lund University.
    Berggren, Kristina
    Mid Sweden University, Faculty of Science, Technology and Media.
    Cox, Deborah
    Norwich Research Park, Norwich, UK.
    Collier Harris, Barley R.
    Norwich Research Park, Norwich, UK.
    Irwin, Judith A.
    Norwich Research Park, Norwich, UK.
    Holm, Svante
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Natural Sciences.
    Säll, Torbjörn
    Lund University.
    Howard, Martin
    Norwich Research Park, Norwich, UK.
    Dean, Caroline
    Norwich Research Park, Norwich, UK.
    Absence of warmth permits epigenetic memory of winter in Arabidopsis2018In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 9, no 1, article id 639Article in journal (Refereed)
    Abstract [en]

    Plants integrate widely fluctuating temperatures to monitor seasonal progression. Here, we investigate the temperature signals in field conditions that result in vernalisation, the mechanism by which flowering is aligned with spring. We find that multiple, distinct aspects of the temperature profile contribute to vernalisation. In autumn, transient cold temperatures promote transcriptional shutdown of Arabidopsis FLOWERING LOCUS C (FLC), independently of factors conferring epigenetic memory. As winter continues, expression of VERNALIZATION INSENSITIVE3 (VIN3), a factor needed for epigenetic silencing, is upregulated by at least two independent thermosensory processes. One integrates long-term cold temperatures, while the other requires the absence of daily temperatures above 15 °C. The lack of spikes of high temperature, not just prolonged cold, is thus the major driver for vernalisation. Monitoring of peak daily temperature is an effective mechanism to judge seasonal progression, but is likely to have deleterious consequences for vernalisation as the climate becomes more variable. 

  • 2.
    Molina-Lopez, F.
    et al.
    Stanford University, Stanford, CA United States; KU Leuven, Leuven, Belgium.
    Gao, T. Z.
    Stanford University, Stanford, CA United States.
    Kraft, U.
    Stanford University, Stanford, CA United States; University of Cambridge, Cambridge, United Kingdom.
    Zhu, C.
    Stanford University, Stanford, CA United States.
    Öhlund, Thomas
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Natural Sciences. Stanford University, Stanford, CA United States.
    Pfattner, R.
    Stanford University, Stanford, CA United States; Institute of Materials Science of Barcelona (ICMAB-CISC), Bellaterra, Spain.
    Feig, V. R.
    Stanford University, Stanford, CA United States.
    Kim, Y.
    Stanford University, Stanford, CA United States.
    Wang, S.
    Stanford University, Stanford, CA United States; University of Chicago, Chicago, IL United States.
    Yun, Y.
    Samsung Advanced Institute of Technology, Suwon, South Korea.
    Bao, Z.
    Stanford University, Stanford, CA United States.
    Inkjet-printed stretchable and low voltage synaptic transistor array2019In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 10, no 1, article id 2676Article in journal (Refereed)
    Abstract [en]

    Wearable and skin electronics benefit from mechanically soft and stretchable materials to conform to curved and dynamic surfaces, thereby enabling seamless integration with the human body. However, such materials are challenging to process using traditional microelectronics techniques. Here, stretchable transistor arrays are patterned exclusively from solution by inkjet printing of polymers and carbon nanotubes. The additive, non-contact and maskless nature of inkjet printing provides a simple, inexpensive and scalable route for stacking and patterning these chemically-sensitive materials over large areas. The transistors, which are stable at ambient conditions, display mobilities as high as 30 cm2 V−1 s−1 and currents per channel width of 0.2 mA cm−1 at operation voltages as low as 1 V, owing to the ionic character of their printed gate dielectric. Furthermore, these transistors with double-layer capacitive dielectric can mimic the synaptic behavior of neurons, making them interesting for conformal brain-machine interfaces and other wearable bioelectronics. 

  • 3.
    St Pourcain, Beate
    et al.
    Univ Bristol, Sch Oral & Dent Sci, Bristol BS1 2LY, Avon, England.
    Rodriguez, Alina
    Mid Sweden University, Faculty of Human Sciences, Department of Psychology. Univ London Imperial Coll Sci Technol & Med, Sch Publ Hlth, Ctr Environm & Hlth, Dept Epidemiol & Biostat,MRC,Publ Hlth England, London W2 1PG, England.
    Common variation near ​ROBO2 is associated with expressive vocabulary in infancy2014In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 5, article id A4831Article in journal (Refereed)
    Abstract [en]

    Twin studies suggest that expressive vocabulary at ~24 months is modestly heritable. However, the genes influencing this early linguistic phenotype are unknown. Here we conduct a genome-wide screen and follow-up study of expressive vocabulary in toddlers of European descent from up to four studies of the EArly Genetics and Lifecourse Epidemiology consortium, analysing an early (15–18 months, ‘one-word stage’, NTotal=8,889) and a later (24–30 months, ‘two-word stage’,NTotal=10,819) phase of language acquisition. For the early phase, one single-nucleotide polymorphism (rs7642482) at 3p12.3 near ​ROBO2, encoding a conserved axon-binding receptor, reaches the genome-wide significance level (P=1.3 × 10−8) in the combined sample. This association links language-related common genetic variation in the general population to a potential autism susceptibility locus and a linkage region for dyslexia, speech-sound disorder and reading. The contribution of common genetic influences is, although modest, supported by genome-wide complex trait analysis (meta-GCTA h215–18-months=0.13, meta-GCTA h224–30-months=0.14) and in concordance with additional twin analysis (5,733 pairs of European descent,h224-months=0.20).

  • 4.
    Wiedorn, Max O.
    et al.
    DESY, Hamburg, Germany; Univ Hamburg, Hamburg, Germany.
    Oberthuer, Dominik
    DESY, Hamburg, Germany.
    Bean, Richard
    European XFEL GmbH, Schenefeld, Germany.
    Schubert, Robin
    Univ Hamburg, Hamburg, Germany; Integrated Biol Infrastruct Life Sci Facil Europe, Schenefeld, Germany.
    Werner, Nadine
    Univ Hamburg, Hamburg, Germany.
    Abbey, Brian
    La Trobe Univ, Bundoora, Australia.
    Aepfelbacher, Martin
    Univ Med Ctr Hamburg Eppendorf UKE, Hamburg, Germany.
    Adriano, Luigi
    DESY, Hamburg, Germany.
    Allahgholi, Aschkan
    DESY, Hamburg, Germany.
    Al-Qudami, Nasser
    European XFEL GmbH, Schenefeld, Germany.
    Andreasson, Jakob
    Uppsala Univ, Uppsala; Czech Acad Sci, Prague, Czech Republic; Chalmers Univ Technol, Gothenburg.
    Aplin, Steve
    DESY, Hamburg, Germany.
    Awel, Salah
    DESY, Hamburg, Germany; Univ Hamburg, Hamburg, Germany.
    Ayyer, Kartik
    DESY, Hamburg, Germany.
    Bajt, Sasa
    DESY, Hamburg, Germany.
    Barak, Imrich
    DESY, Hamburg, Germany; Univ Hamburg, Hamburg, Germany.
    Bari, Sadia
    DESY, Hamburg, Germany.
    Bielecki, Johan
    European XFEL GmbH, Schenefeld, Germany.
    Botha, Sabine
    Univ Hamburg, Hamburg, Germany.
    Boukhelef, Djelloul
    European XFEL GmbH, Schenefeld, Germany.
    Brehm, Wolfgang
    DESY, Hamburg, Germany.
    Brockhauser, Sandor
    European XFEL GmbH, Schenefeld, Germany; Hungarian Acad Sci, Szeged, Hungary.
    Cheviakov, Igor
    Univ Med Ctr Hamburg Eppendorf UKE, Hamburg, Germany.
    Coleman, Matthew A.
    Lawrence Livermore Natl Lab, Livermore, CA, USA.
    Cruz-Mazo, Francisco
    Univ Seville, Seville, Spain.
    Danilevski, Cyril
    European XFEL GmbH, Schenefeld, Germany.
    Darmanin, Connie
    La Trobe Univ, Bundoora, Vic 3086, Australia.
    Doak, R. Bruce
    Max Planck Inst Med Res, Heidelberg, Germany.
    Domaracky, Martin
    DESY, Hamburg, Germany.
    Doerner, Katerina
    European XFEL GmbH, Schenefeld, Germany.
    Du, Yang
    DESY, Hamburg, Germany.
    Fangohr, Hans
    European XFEL GmbH, Schenefeld, Germany; Univ Southampton, Southampton, Hants, England.
    Fleckenstein, Holger
    DESY, Hamburg, Germany.
    Frank, Matthias
    Lawrence Livermore Natl Lab, Livermore, CA, USA.
    Fromme, Petra
    Arizona State Univ, Tempe, AZ, USA.
    Ganan-Calvo, Alfonso M.
    Univ Seville, Seville, Spain.
    Gevorkov, Yaroslav
    DESY, Hamburg, Germany; Hamburg Univ Technol, Hamburg, Germany.
    Giewekemeyer, Klaus
    European XFEL GmbH, Schenefeld, Germany.
    Ginn, Helen Mary
    Diamond Light Source, Didcot, Oxon, England; Univ Oxford, Didcot, Oxon, England.
    Graafsma, Heinz
    Mid Sweden University. DESY, Hamburg, Germany.
    Graceffa, Rita
    European XFEL GmbH, Schenefeld, Germany.
    Greiffenberg, Dominic
    Paul Scherrer Inst, Villigen, Switzerland.
    Gumprecht, Lars
    DESY, Hamburg, Germany.
    Goettlicher, Peter
    DESY, Hamburg, Germany.
    Hajdu, Janos
    Uppsala Univ, Uppsala; Czech Acad Sci, Prague, Czech Republic.
    Hauf, Steffen
    European XFEL GmbH, Schenefeld, Germany.
    Heymann, Michael
    Max Planck Inst Biochem, Martinsried, Germany.
    Holmes, Susannah
    La Trobe Univ, Bundoora, Vic 3086, Australia.
    Horke, Daniel A.
    DESY, Hamburg, Germany; Univ Hamburg, Hamburg, Germany.
    Hunter, Mark S.
    SLAC Natl Accelerator Lab, Menlo Pk, CA. USA.
    Imlau, Siegfried
    DESY, Hamburg, Germany.
    Kaukher, Alexander
    European XFEL GmbH, Schenefeld, Germany.
    Kim, Yoonhee
    European XFEL GmbH, Schenefeld, Germany.
    Klyuev, Alexander
    DESY, Hamburg, Germany.
    Knoska, Juraj
    DESY, Hamburg, Germany; Univ Hamburg, Hamburg, Germany.
    Kobe, Bostjan
    Univ Queensland, Brisbane, Qld 4072, Australia.
    Kuhn, Manuela
    DESY, Hamburg, Germany.
    Kupitz, Christopher
    Univ Wisconsin, Milwaukee, WI, USA.
    Kueper, Jochen
    DESY, Hamburg, Germany; Univ Hamburg, Hamburg, Germany.
    Lahey-Rudolph, Janine Mia
    DESY, Hamburg, Germany; Univ Lubeck, Lubeck, Germany.
    Laurus, Torsten
    DESY, Hamburg, Germany.
    Le Cong, Karoline
    Univ Hamburg, Hamburg, Germany.
    Letrun, Romain
    European XFEL GmbH, Schenefeld, Germany.
    Xavier, P. Lourdu
    DESY, Hamburg, Germany; Max Planck Inst Struct & Dynam Matter, Hamburg, Germany.
    Maia, Luis
    European XFEL GmbH, Schenefeld, Germany.
    Maia, Filipe R. N. C.
    Uppsala Univ, Uppsala; Lawrence Berkeley Natl Lab, Berkeley, CA, USA.
    Mariani, Valerio
    DESY, Hamburg, Germany.
    Messerschmidt, Marc
    European XFEL GmbH, Schenefeld, Germany.
    Metz, Markus
    DESY, Hamburg, Germany.
    Mezza, Davide
    Paul Scherrer Inst, Villigen, Switzerland.
    Michelat, Thomas
    European XFEL GmbH,Schenefeld, Germany.
    Mills, Grant
    European XFEL GmbH, Schenefeld, Germany.
    Monteiro, Diana C. F.
    Univ Hamburg, Hamburg, Germany.
    Morgan, Andrew
    DESY, Hamburg, Germany.
    Muhlig, Kerstin
    Uppsala Univ, Uppsala.
    Munke, Anna
    Uppsala Univ, Uppsala.
    Muennich, Astrid
    European XFEL GmbH, Schenefeld, Germany.
    Nette, Julia
    Univ Hamburg, Hamburg, Germany.
    Nugent, Keith A.
    La Trobe Univ, Bundoora, Vic 3086, Australia.
    Nuguid, Theresa
    Univ Hamburg, Hamburg, Germany.
    Orville, Allen M.
    Diamond Light Source, Didcot, Oxon, England; Univ Oxford, Didcot, Oxon, England.
    Pandey, Suraj
    Univ Wisconsin, Milwaukee, WI, USA.
    Pena, Gisel
    DESY, Hamburg, Germany.
    Villanueva-Perez, Pablo
    DESY, Hamburg, Germany.
    Poehlsen, Jennifer
    DESY, Hamburg, Germany.
    Previtali, Gianpietro
    European XFEL GmbH, Schenefeld, Germany.
    Redecke, Lars
    Univ Med Ctr Hamburg Eppendorf UKE, Hamburg, Germany.;Univ Lubeck, Lubeck, Germany.
    Riekehr, Winnie Maria
    Univ Lubeck, Lubeck, Germany.
    Rohde, Holger
    Univ Med Ctr Hamburg Eppendorf UKE, Hamburg, Germany.
    Round, Adam
    European XFEL GmbH, Schenefeld, Germany.
    Safenreiter, Tatiana
    DESY, Hamburg, Germany.
    Sarrou, Iosifina
    DESY, Hamburg, Germany.
    Sato, Tokushi
    DESY, Hamburg, Germany; European XFEL GmbH, Schenefeld, Germany.
    Schmidt, Marius
    Univ Wisconsin, Milwaukee, WI, USA.
    Schmitt, Bernd
    Paul Scherrer Inst, Villigen, Switzerland.
    Schoenherr, Robert
    Univ Lubeck, Lubeck, Germany.
    Schulz, Joachim
    European XFEL GmbH, Schenefeld, Germany.
    Sellberg, Jonas A.
    KTH Royal Inst Technol, Stockholm, Sweden.
    Seibert, M. Marvin
    Uppsala Univ, Uppsala.
    Seuring, Carolin
    SAS, Bratislava, Slovakia.
    Shelby, Megan L.
    Lawrence Livermore Natl Lab, Livermore, CA, USA.
    Shoeman, Robert L.
    Max Planck Inst Med Res, Heidelberg, Germany.
    Sikorski, Marcin
    European XFEL GmbH, Schenefeld, Germany.
    Silenzi, Alessandro
    European XFEL GmbH, Schenefeld, Germany.
    Stan, Claudiu A.
    Rutgers Univ Newark,Newark, NJ, USA.
    Shi, Xintian
    Paul Scherrer Inst, Villigen, Switzerland.
    Stern, Stephan
    DESY, Hamburg, Germany; European XFEL GmbH, Schenefeld, Germany.
    Sztuk-Dambietz, Jola
    European XFEL GmbH, Schenefeld, Germany.
    Szuba, Janusz
    European XFEL GmbH, Schenefeld, Germany.
    Tolstikova, Aleksandra
    DESY, Hamburg, Germany.
    Trebbin, Martin
    Univ Hamburg, Hamburg, Germany; Univ Buffalo, Buffalo, NY, USA; Univ Hamburg, Hamburg, Germany.
    Trunk, Ulrich
    DESY, Hamburg, Germany.
    Vagovic, Patrik
    DESY, Hamburg, Germany; European XFEL GmbH, Schenefeld, Germany.
    Ve, Thomas
    Griffith Univ, Southport, Qld, Australia.
    Weinhausen, Britta
    European XFEL GmbH, Schenefeld, Germany.
    White, Thomas A.
    DESY, Hamburg, Germany.
    Wrona, Krzysztof
    European XFEL GmbH, Schenefeld, Germany.
    Xu, Chen
    European XFEL GmbH,Schenefeld, Germany.
    Yefanov, Oleksandr
    DESY, Hamburg, Germany.
    Zatsepin, Nadia
    Arizona State Univ, Tempe, AZ, USA.
    Zhang, Jiaguo
    Paul Scherrer Inst, Villigen, Switzerland.
    Perbandt, Markus
    Univ Hamburg, Hamburg, Germany; Univ Hamburg, Hamburg, Germany; Univ Med Ctr Hamburg Eppendorf UKE, Hamburg, Germany.
    Mancuso, Adrian P.
    European XFEL GmbH, Schenefeld, Germany.
    Betzel, Christian
    Univ Hamburg, Hamburg, Germany; Integrated Biol Infrastruct Life Sci Facil Europe, Schenefeld, Germany.
    Chapman, Henry
    DESY, Hamburg, Germany; Univ Hamburg, Hamburg, Germany.
    Barty, Anton
    DESY, Hamburg, Germany.
    Megahertz serial crystallography2018In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 9, article id 4025Article in journal (Refereed)
    Abstract [en]

    The new European X-ray Free-Electron Laser is the first X-ray free-electron laser capable of delivering X-ray pulses with a megahertz inter-pulse spacing, more than four orders of magnitude higher than previously possible. However, to date, it has been unclear whether it would indeed be possible to measure high-quality diffraction data at megahertz pulse repetition rates. Here, we show that high-quality structures can indeed be obtained using currently available operating conditions at the European XFEL. We present two complete data sets, one from the well-known model system lysozyme and the other from a so far unknown complex of a beta-lactamase from K. pneumoniae involved in antibiotic resistance. This result opens up megahertz serial femtosecond crystallography (SFX) as a tool for reliable structure determination, substrate screening and the efficient measurement of the evolution and dynamics of molecular structures using megahertz repetition rate pulses available at this new class of X-ray laser source.

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