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  • 1.
    Aranda, Jesus Javier Lechuga
    et al.
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Electronics Design.
    Bader, Sebastian
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Electronics Design.
    Oelmann, Bengt
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Electronics Design.
    A space-coiling resonator for improved energy harvesting in fluid power systems2019In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 291, p. 58-67Article in journal (Refereed)
    Abstract [en]

    Pressure fluctuation energy harvesting devices are promising alternatives to power up wireless sensors in fluid power systems. In past studies, classical Helmholtz resonators have been used to enhance the energy harvesting capabilities of these harvesters. Nevertheless, for fluctuations with frequency components in the range of less than 1000 Hz, the design of compact resonators is difficult, mostly for their poor acoustic gain. This paper introduces a space-coiling resonator fabricated using 3D printing techniques. The proposed resonator can achieve a better acoustic gain bounded by a small bulk volume compared to a classic Helmholtz resonator, improving the energy harvesting capabilities of pressure fluctuation energy harvesters. The resonator is designed and evaluated using finite-element-method techniques and examined experimentally. Three space-coiling-resonators are designed, manufactured and compared to classic Helmholtz resonators for three frequencies: 280 Hz, 480 Hz and 920 Hz. This work displays the possibility of compact, high-performance pressure fluctuation energy harvesters and the advantages of the space-coiling printed resonators to enhance the harvesting performance.

  • 2. Nafari, A.
    et al.
    Danilov, A.
    Rödjegård, H.
    Enoksson, P.
    Olin, Håkan
    Mid Sweden University, Faculty of Science, Technology and Media, Department of Engineering, Physics and Mathematics.
    A micromachined nanoindentation force sensor2005In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 123-124, p. 44-49Article in journal (Refereed)
    Abstract [en]

    A capacitive force sensor for in situ nanoindentation experiments in TEM has been designed, manufactured and evaluated. The confined space of the TEM specimen holder restricts the size of the fabricated sensor to 2 turn x 1.5 mm x 2 mm to allow mounting. A unique feature of the sensor is an integrated fixture for interchangeable tips, e.g. diamond tips. The sensor is fabricated in silicon anodically bonded to glass and the device is formed by DRIE. To improve the control of spring thickness and circumvent problems during fabrication a SOI wafer and slightly altered design was used in conjunction to an improved process, which resulted in a yield near 100%. The sensor is characterized by a force application using a piezoelectric positioning system, an electrostatic evaluation and a resonance frequency test using a scanning laser doppler vibrometer. The capacitance is measured with an off-chip read-out circuit. The resonance frequency test yielded a spring constant of 750 N/m, which results in a sensitivity of 0.27 pF/0.1 mu N for small deflections. The evaluation shows that the force sensor is suitable for in situ nanoindentation for measurements in the range of 0-100 mu N.

     

  • 3.
    Pasquariello, Donato
    et al.
    Uppsala universitet, Institutionen för materialvetenskap.
    Lindeberg, Mikael
    Uppsala universitet, Institutionen för materialvetenskap.
    Hedlund, Christer
    Uppsala universitet, Institutionen för materialvetenskap.
    Hjort, Klas
    Uppsala universitet, Institutionen för materialvetenskap.
    Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding2000In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. A82, p. 239-244Article in journal (Refereed)
    Abstract [en]

    A limitation in the use of wafer bonding has been the necessity for high-temperature annealing after contacting the wafers at room temperature. In this paper, we try to find the highest surface energy as a function of self-bias voltage in oxygen plasma-activated wafer bonding, in order to achieve a low-temperature bonding process. The bonding was performed in situ the vacuum chamber. It was found that oxygen plasma has a smoothing effect on the surface roughness, rather independent of the plasma self-bias. However, a moderate self-bias voltage proved to give the highest surface energy for the bonded wafers, both at room-temperature and after annealing at 200°C. We believe that this is due to the fact that a moderate self-bias is the most efficient in removing surface contaminants, like water and hydrocarbons. It was also found that even after annealing at higher temperatures, 480°C and 720°C, the plasma-bonded wafers showed higher surface energy values than wafers bonded in ambient air. This investigation was focused on low-effect plasmas, <200 W, keeping the induced plasma damages at a minimum.

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