A quantum mechanical extension of the full band ensemble Monte Carlo (MC) simulation method is presented. The new approach goes beyond the traditional semi-classical method generally used in MC simulations of charge transport in semiconductor materials and devices. The extension is necessary in high-field simulations of semiconductor materials with a complex unit cell, such as the hexagonal SiC polytypes or wurtzite GaN. Instead of complex unit cells the approach can also be used for super-cells, in order to understand charge transport at surfaces, around point defects, or in quantum wells.
Conference Paper