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Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films
European Spallat Source ESS AB, SE-22100 Lund, Sweden.
Linkoping Univ, Dept Phys Chem & Biol IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden.
Linkoping Univ, Dept Phys Chem & Biol IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden.
Linkoping Univ, Dept Phys Chem & Biol IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden.
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 19, 195301Article in journal (Refereed) Published
Abstract [en]

We report Zr1-xGdxN thin films deposited by magnetron sputter deposition. We show a solid solubility of the highly neutron absorbing GdN into ZrN along the whole compositional range, which is in excellent agreement with our recent predictions by first-principles calculations. An oxidization study in air shows that Zr1-xGdxN with x reaching from 1 to close to 0 fully oxidizes, but that the oxidization is slowed down by an increased amount of ZrN or stopped by applying a capping layer of ZrN. The crystalline quality of Zr0.5Gd0.5N films increases with substrate temperatures increasing from 100 degrees C to 900 degrees C. (C) 2015 Author(s).

Place, publisher, year, edition, pages
2015. Vol. 117, no 19, 195301
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-25667DOI: 10.1063/1.4921167ISI: 000355005600031Scopus ID: 2-s2.0-84929650078Local ID: STCOAI: oai:DiVA.org:miun-25667DiVA: diva2:849242
Available from: 2015-08-27 Created: 2015-08-18 Last updated: 2016-12-19Bibliographically approved

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