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Probing Defects in a Small Pixellated CdTe Sensor Using an Inclined Mono Energetic X-Ray Micro Beam
Mid Sweden University, Faculty of Science, Technology and Media, Department of Electronics Design. CERN, CH-1211, Geneva, 23, Switzerland .
Mid Sweden University, Faculty of Science, Technology and Media, Department of Electronics Design.ORCID iD: 0000-0002-8325-5177
Diamond Light Source, Harwell Science and Innovation Campus, Chiltern, Didcot, Oxfordshire, OX11 0QX, United Kingdom .
Mid Sweden University, Faculty of Science, Technology and Media, Department of Electronics Design.ORCID iD: 0000-0002-5619-409X
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2013 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 60, no 4, 2864-2869 p.Article in journal (Refereed) Published
Abstract [en]

High quantum efficiency is important in X-ray imaging applications. This means using high-Z sensor materials. Unfortunately many of these materials suffer from defects that cause non-ideal charge transport. In order to increase the understanding of these defects, we have mapped the 3D response of a number of defects in two 1 mm thick CdTe sensors with different pixel sizes (55 mu m and 110 mu m) using a monoenergetic microbeam at 79 keV. The sensors were bump bonded to Timepix read out chips. Data was collected in photon counting as well as time-over-thresholdmode. The time-over-thresholdmode is a very powerful tool to investigate charge transport properties and fluorescence in pixellated detectors since the signal from the charge that each photon deposits in each pixel can be analyzed. Results show distorted electrical field around the defects, indications of excess leakage current and large differences in behavior between electron collection and hole collection mode. The experiments were carried out on the Extreme Conditions Beamline I15 at Diamond Light Source.

Place, publisher, year, edition, pages
2013. Vol. 60, no 4, 2864-2869 p.
Keyword [en]
CdTe, CdTe characterization, CdTe detectors, charge collection, charge sharing, charge trapping, defect characterization, defects, detectors, photon counting, radiation detectors, X-ray detectors, X-rays
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-19922DOI: 10.1109/TNS.2013.2257851ISI: 000323451800006Scopus ID: 2-s2.0-84882896824Local ID: STCOAI: oai:DiVA.org:miun-19922DiVA: diva2:655221
Available from: 2013-10-10 Created: 2013-09-25 Last updated: 2016-10-19Bibliographically approved

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Fröjdh, ErikFröjdh, ChristerKrapohl, DavidNorlin, BörjeThungström, Göran
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