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Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2011 (English)Patent (Other (popular science, discussion, etc.))
Abstract [en]

A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.

Place, publisher, year, edition, pages
2011.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-19147OAI: oai:DiVA.org:miun-19147DiVA: diva2:627112
Patent
US 7994917B2 (2011-08-09)
Available from: 2013-06-11 Created: 2013-06-11 Last updated: 2014-04-24Bibliographically approved

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https://docs.google.com/viewer?url=patentimages.storage.googleapis.com/pdfs/US7994017.pdf

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