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ELECTRON-ION RECOMBINATION RATE COEFFICIENTS FOR C II FORMING C I
Univ Stockholm, Dept Phys, S-10691 Stockholm, Sweden.
Univ Stockholm, Dept Phys, S-10691 Stockholm, Sweden.
Univ Stockholm, Dept Phys, S-10691 Stockholm, Sweden.
Marmara Univ, Dept Phys, TR-81040 Istanbul, Turkey.
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2012 (English)In: Astrophysical Journal, ISSN 0004-637X, E-ISSN 1538-4357, Vol. 753, no 2, p. Art. no. 132-Article in journal (Refereed) Published
Abstract [en]

We have determined absolute dielectronic recombination rate coefficients for C II, using the CRYRING heavy-ions storage ring. The resonances due to 2s-2p (Delta n= 0) core excitations are detected in the center-of-mass energy range of 0-15 eV. The experimental results are compared with intermediate coupling AUTOSTRUCTURE calculations. Plasma rate coefficients are obtained from the DR spectrum by convoluting it with a Maxwell-Boltzmann energy distribution for temperatures in the range of 10(3)-10(6) K. The derived temperature-dependent plasma recombination rate coefficients are presented graphically and parameterized by using a fit formula for convenient use in plasma modeling codes. The experimental rate coefficients are also compared with the theoretical data available in literature. In the temperature range of 10(3)-2 x 10(4) K, our experimental results show that previous calculations severely underestimate the plasma rate coefficients and also our AUTOSTRUCTURE calculation does not reproduce the experimental plasma rate coefficients well. Above 2x10(4) K, the agreement between the experimental and theoretical rate coefficients is much better, and the deviations are smaller than the estimated uncertainties.

Place, publisher, year, edition, pages
2012. Vol. 753, no 2, p. Art. no. 132-
Keywords [en]
atomic data, atomic processes, plasmas
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:miun:diva-17059DOI: 10.1088/0004-637X/753/2/132ISI: 000305912700039Scopus ID: 2-s2.0-84862868343OAI: oai:DiVA.org:miun-17059DiVA, id: diva2:559145
Available from: 2012-10-08 Created: 2012-09-26 Last updated: 2017-12-07Bibliographically approved

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Glans, Peter

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