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A thermal neutron detector based on planar silicon sensor with TiB 2 coating
Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Praha, Czech Republic.
Czech Metrology Institute, Radiová 1, 102 00 Praha 10, Czech Republic.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-5619-409X
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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2012 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 7, no 1, Art. no. C01053- p.Article in journal (Refereed) Published
Abstract [en]

Neutron radiation as a non-ionizing radiation is particularly difficult to detect; therefore a conversion material is required. The conversion material converts neutrons into secondary charged particles in order for them to be detected in a silicon detector. The use of titanium diboride (TiB 2) as the conversion material deposited by an electron beam-physical vapour deposition (EB-PVD) as a part of a front-side contact of a planar silicon detector is presented. The effect of different front-side contact material compositions is discussed. The detectors behaviour was examined using alpha particles and thermal neutrons from an 241Am-Be source. Simultaneously, a Geant4 simulation was so as executed to evaluate the conversion layer functionality and to discover the conversion material thickness for the best neutron detection efficiency. © 2012 IOP Publishing Ltd and SISSA.

Place, publisher, year, edition, pages
2012. Vol. 7, no 1, Art. no. C01053- p.
Keyword [en]
Neutron detectors (cold, thermal, fast neutrons); Si microstrip and pad detectors; Solid state detectors
National Category
Other Physics Topics
Identifiers
URN: urn:nbn:se:miun:diva-16746DOI: 10.1088/1748-0221/7/01/C01053ISI: 000303806200053Scopus ID: 2-s2.0-84856934655Local ID: STCOAI: oai:DiVA.org:miun-16746DiVA: diva2:545365
Available from: 2012-08-20 Created: 2012-08-17 Last updated: 2016-10-20Bibliographically approved
In thesis
1. Monte Carlo and Charge Transport Simulation of Pixel Detector Systems
Open this publication in new window or tab >>Monte Carlo and Charge Transport Simulation of Pixel Detector Systems
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis is about simulation of semiconductor X-ray and particledetectors. The simulation of a novel coating for solid state neutrondetectors is discussed as well as the implementation of a simulationframework for hybrid pixel detectors.Today’s most common thermal neutron detectors are proportionalcounters, that use 3He gas in large tubes or multi wire arrays. Globalnuclear disarmament and the increase in use for homeland securityapplications has created a shortage of the gas which poses a problemfor neutron spallation sources that require higher resolution and largersensors. In this thesis a novel material and clean room compatible pro-cess for neutron conversion are discussed. Simulations and fabricationhave been executed and analysed in measurements. It has been proventhat such a device can be fabricated and detect thermal neutrons.Spectral imaging hybrid pixel detectors like the Medipix chipare the most advanced imaging systems currently available. Thesechips are highly sophisticated with several hundreds of transistors perpixel to enable features like multiple thresholds for noise free photoncounting measurements, spectral imaging as well as time of arrivalmeasurements. To analyse and understand the behaviour of differentsensor materials bonded to the chip and to improve development offuture generations of the chip simulations are necessary. Generally, allparts of the detector system are simulated independently. However, itis favourable to have a simulation framework that is able to combineMonte Carlo particle transport, charge transport in the sensor as wellas analogue and digital response of the pixel read-out electronics. Thisthesis aims to develop such a system that has been developed withGeant4 and analytical semiconductor and electronics models. Further-more, it has been verified with data from measurements with severalMedipix and Timepix sensors as well as TCAD simulations.Results show that such a framework is feasible even for imagingsimulations. It shows great promise to be able to be extended withfuture pixel detector designs and semiconductor materials as well asneutron converters to aim for next generation imaging devices.

Place, publisher, year, edition, pages
Sundsvall: Mid Sweden University, 2015. 95 p.
Series
Mid Sweden University doctoral thesis, ISSN 1652-893X ; 215
Keyword
Monte Carlo Simulation, TCAD, pixel detectors, Medipix, Timepix, Finite Element Simulation
National Category
Accelerator Physics and Instrumentation
Identifiers
urn:nbn:se:miun:diva-24763 (URN)STC (Local ID)978-91-88025-06-7 (ISBN)STC (Archive number)STC (OAI)
Public defence
2015-04-08, M102, Mittuniversitetet, Holmgatan 10, Sundsvall, 10:00 (English)
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Supervisors
Available from: 2015-03-31 Created: 2015-03-31 Last updated: 2016-12-23Bibliographically approved

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Slavicek, TomasKrapohl, DavidPetersson, StureThungström, Göran

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