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Simulation of a silicon neutron detector coated with TiB 2 absorber
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-5619-409X
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Institute of Experimental and Applied Physics (IEAP), Czech Technical University, Horskà 3a/22, 128 00 Prague 2, Czech Republic.
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2012 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 7, no 1, Art. no. C01096- p.Article in journal (Refereed) Published
Abstract [en]

Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process. © 2012 IOP Publishing Ltd and SISSA.

Place, publisher, year, edition, pages
2012. Vol. 7, no 1, Art. no. C01096- p.
Keyword [en]
Detector modeling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc); Neutron detectors (cold, thermal, fast neutrons); Solid state detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-16748DOI: 10.1088/1748-0221/7/01/C01096ISI: 000303806200096Scopus ID: 2-s2.0-84856927467Local ID: STCOAI: oai:DiVA.org:miun-16748DiVA: diva2:545204
Available from: 2012-08-17 Created: 2012-08-17 Last updated: 2016-10-20Bibliographically approved
In thesis
1. Monte Carlo and Charge Transport Simulation of Pixel Detector Systems
Open this publication in new window or tab >>Monte Carlo and Charge Transport Simulation of Pixel Detector Systems
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis is about simulation of semiconductor X-ray and particledetectors. The simulation of a novel coating for solid state neutrondetectors is discussed as well as the implementation of a simulationframework for hybrid pixel detectors.Today’s most common thermal neutron detectors are proportionalcounters, that use 3He gas in large tubes or multi wire arrays. Globalnuclear disarmament and the increase in use for homeland securityapplications has created a shortage of the gas which poses a problemfor neutron spallation sources that require higher resolution and largersensors. In this thesis a novel material and clean room compatible pro-cess for neutron conversion are discussed. Simulations and fabricationhave been executed and analysed in measurements. It has been proventhat such a device can be fabricated and detect thermal neutrons.Spectral imaging hybrid pixel detectors like the Medipix chipare the most advanced imaging systems currently available. Thesechips are highly sophisticated with several hundreds of transistors perpixel to enable features like multiple thresholds for noise free photoncounting measurements, spectral imaging as well as time of arrivalmeasurements. To analyse and understand the behaviour of differentsensor materials bonded to the chip and to improve development offuture generations of the chip simulations are necessary. Generally, allparts of the detector system are simulated independently. However, itis favourable to have a simulation framework that is able to combineMonte Carlo particle transport, charge transport in the sensor as wellas analogue and digital response of the pixel read-out electronics. Thisthesis aims to develop such a system that has been developed withGeant4 and analytical semiconductor and electronics models. Further-more, it has been verified with data from measurements with severalMedipix and Timepix sensors as well as TCAD simulations.Results show that such a framework is feasible even for imagingsimulations. It shows great promise to be able to be extended withfuture pixel detector designs and semiconductor materials as well asneutron converters to aim for next generation imaging devices.

Place, publisher, year, edition, pages
Sundsvall: Mid Sweden University, 2015. 95 p.
Series
Mid Sweden University doctoral thesis, ISSN 1652-893X ; 215
Keyword
Monte Carlo Simulation, TCAD, pixel detectors, Medipix, Timepix, Finite Element Simulation
National Category
Accelerator Physics and Instrumentation
Identifiers
urn:nbn:se:miun:diva-24763 (URN)STC (Local ID)978-91-88025-06-7 (ISBN)STC (Archive number)STC (OAI)
Public defence
2015-04-08, M102, Mittuniversitetet, Holmgatan 10, Sundsvall, 10:00 (English)
Opponent
Supervisors
Available from: 2015-03-31 Created: 2015-03-31 Last updated: 2016-12-23Bibliographically approved

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