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Low frequency noise in strained Si heterojunction bipolar transistors
School of Electrical, Electronic and Computer Engineering, Newcastle University, NE1 7RU Newcastle upon Tyne, United Kingdom.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
School of Electrical, Electronic and Computer Engineering, Newcastle University, NE1 7RU Newcastle upon Tyne, United Kingdom.
School of Electrical, Electronic and Computer Engineering, Newcastle University, NE1 7RU Newcastle upon Tyne, United Kingdom.
2011 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 58, no 12, 4196-4203 p.Article in journal (Refereed) Published
Abstract [en]

The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction transistors (BJTs), processed with strained Si devices, were also measured as a reference. It is found that a lower noise level is obtained in sSi HBTs for a given collector current, which is important for circuit applications, compared with either SiGe HBTs or Si BJTs. However, sSi HBTs exhibit greater low frequency noise compared with other devices at fixed base current. This is due to the presence of defects that are caused by the integration of the strain-relaxed buffer in the fabrication of sSi HBTs. The relationship between low frequency noise and defects is supported by material characterization. © 2011 IEEE.

Place, publisher, year, edition, pages
2011. Vol. 58, no 12, 4196-4203 p.
Keyword [en]
1/f noise, Defect, low frequency noise, strain-relaxed buffer (SRB), strained Si heterojunction bipolar transistors (HBTs), strained silicon
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:miun:diva-15300DOI: 10.1109/TED.2011.2167753Scopus ID: 2-s2.0-82155192212OAI: oai:DiVA.org:miun-15300DiVA: diva2:466378
Note
Art. No.: 6036166Available from: 2011-12-15 Created: 2011-12-15 Last updated: 2012-08-07Bibliographically approved

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