miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Strained-Silicon Heterojunction Bipolar Transistor
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Show others and affiliations
2010 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 57, no 6, p. 1243-1252Article in journal (Refereed) Published
Abstract [en]

Experimental and modeling results are reported for high-performance strained-silicon heterojunction bipolar transistors (HBTs), comprising a tensile strained-Si emitter and a compressively strained Si0.7Ge0.3 base on top of a relaxed Si0.85Ge0.15 collector. By using a Si0.85Ge0.15 virtual substrate strain platform, it is possible to utilize a greater difference in energy band gaps between the base and the emitter without strain relaxation of the base layer. This leads to much higher gain, which can be traded off against lower base resistance. There is an improvement in the current gain beta of 27x over a conventional silicon bipolar transistor and 11x over a conventional SiGe HBT, which were processed as reference devices. The gain improvement is largely attributed to the difference in energy band gap between the emitter and the base, but the conduction band offset between the base and the collector is also important for the collector current level.

Place, publisher, year, edition, pages
2010. Vol. 57, no 6, p. 1243-1252
Keywords [en]
Band-gap engineering; BiCOMS integration; stained-Si heterojunction bipolar transistor (HBT)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-11628DOI: 10.1109/TED.2010.2045667ISI: 000277884100008Scopus ID: 2-s2.0-77952731669OAI: oai:DiVA.org:miun-11628DiVA, id: diva2:323285
Note
Article number 5453056Available from: 2010-06-10 Created: 2010-06-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

Persson, Stefan

Search in DiVA

By author/editor
Persson, Stefan
By organisation
Department of Information Technology and Media
In the same journal
IEEE Transactions on Electron Devices
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 385 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf