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Ionization rates and critical fields in 4H-SiC junction devices
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
1998 (English)In: Silicon Carbide, III-Nitrides and Related Materials. 7th International Conference, 31 Aug.-5 Sept. 1997 , Stockholm, Sweden: pt.1, 1998, 513-516 p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
1998. 513-516 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 264-268
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5844Local ID: 3637OAI: oai:DiVA.org:miun-5844DiVA: diva2:30877
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
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Language
  • de-DE
  • en-GB
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  • nn-NB
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Output format
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