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Theoretical treatments of band edges in SiC polytypes at high carrier concentrations
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2000 (English)In: International Conference on Silicon Carbide and Related Materials, ICSRM'99, 10-15 Oct. 1999 , Research Triangle Park, NC, USA, 2000, 719-724 p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
2000. 719-724 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 719-24
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5842Local ID: 3625OAI: oai:DiVA.org:miun-5842DiVA: diva2:30875
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
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  • apa
  • harvard1
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