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A study of band to band tunneling with application to high-field transport in hexagonal SiC polytypes
Solid State Electronics, Dept. of Electronics, Royal Institute of Technology, SE-16440 Kista, Sweden.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2001 (English)In: 3rd European Conference on Silicon Carbide and Related Materials KLOSTER BANZ, GERMANY, SEP, 2000, 2001, 487-490 p.Conference paper, (Refereed)
Abstract [en]

The band structure of hexagonal SiC polytypes has regions in the k-space where two or more energy bands are very close to each other. Tunneling of electrons (or holes) between bands due to a high electric field is one of the processes that may allow the electron to jump between energy bands. It is important to consider this effect in order to understand high-field transport properties in these polytypes. In this work we have used the two-band k·p approximation [1] to calculate the time-dependent tunneling probability for electron transitions between two bands using the approach of Krieger and Iafrate (KI) [2]. Electric field strengths between 0.1-4 MV/cm have been used to study the effect of tunneling. Drift times in the order of 10 fs have been considered, which is representative for the time between scattering events. We have applied the k·p approximation to different points in the Brillouin zone of 4H-SiC and proved that there is considerable tunneling between bands under realistic electric field strengths and scattering times.

Place, publisher, year, edition, pages
2001. 487-490 p.
Series
Materials science forum, ISSN 0255-5476 ; 353-3
Keyword [en]
Band to band tunneling; High electric fields; High field transport; Polytypes; Time dependent tunneling probability
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5840ISI: 000168535200119Scopus ID: 4243853664Local ID: 3623ISBN: 0-87849-873-7 (print)OAI: oai:DiVA.org:miun-5840DiVA: diva2:30873
Conference
3rd European Conference on Silicon Carbide and Related Materials;Kloster Banz, Ger;Code45058
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf