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Crystal defects as source of anomalous forward voltage increase of 4H SiC diodes
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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2001 (English)In: 3rd European Conference on Silicon Carbide and Related Materials KLOSTER BANZ, GERMANY, SEP, 2000, 2001, 299-302 p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
2001. 299-302 p.
Series
Materials science forum, ISSN 0255-5476 ; 353-3
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5839Local ID: 3621ISBN: 0-87849-873-7 (print)OAI: oai:DiVA.org:miun-5839DiVA: diva2:30872
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2012-02-12Bibliographically approved

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Lindefelt, Ulf
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Department of Information Technology and Media
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