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Doping-Related Strain in n-Doped 4H-SiC Crystals
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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2003 (English)In: Silicon Carbide and Related Materials 2002. ECSCRM 2002. 4th European Conference on Silicon Carbide and Related Materials, 2-5 Sept. 2002 , Linkoping, Sweden, 2003, p. 269-272Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2003. p. 269-272
Series
Materials Science Forum, ISSN 0255-5476 ; 433-436
National Category
Natural Sciences
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URN: urn:nbn:se:miun:diva-5834Local ID: 3605OAI: oai:DiVA.org:miun-5834DiVA, id: diva2:30867
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf

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