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Doping-Related Strain in n-Doped 4H-SiC Crystals
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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2003 (English)In: Silicon Carbide and Related Materials 2002. ECSCRM 2002. 4th European Conference on Silicon Carbide and Related Materials, 2-5 Sept. 2002 , Linkoping, Sweden, 2003, 269-272 p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
2003. 269-272 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 433-436
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5834Local ID: 3605OAI: oai:DiVA.org:miun-5834DiVA: diva2:30867
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf
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Department of Information Technology and Media
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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