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Insight into the Degradation Phenomenon in SiC Devices from ab initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2003 (English)In: Silicon Carbide and Related Materials 2002. ECSCRM 2002. 4th European Conference on Silicon Carbide and Related Materials, 2-5 Sept. 2002 , Linkoping, Sweden, 2003, 907-912 p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
2003. 907-912 p.
Series
Materials science forum, ISSN 0255-5476 ; 433-436
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5833Local ID: 3604OAI: oai:DiVA.org:miun-5833DiVA: diva2:30866
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
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  • nn-NO
  • nn-NB
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Output format
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