miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Changes in the exciton-related photoluminescence of 4H- and 6H-SiC induced by uniaxial stress
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Show others and affiliations
1998 (English)In: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97) STOCKHOLM, SWEDEN, AUG 31-SEP 05, 1997, 1998, 489-492 p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
1998. 489-492 p.
Series
Materials science forum, ISSN 0255-5476 ; 264-2
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5817Local ID: 3640ISBN: 0-87849-790-0 (print)OAI: oai:DiVA.org:miun-5817DiVA: diva2:30850
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-11Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Lindefelt, Ulf
By organisation
Department of Information Technology and Media
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

Total: 39 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf