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Electronic structure of neutral complex defects in silicon
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1986 (English)In: 14th International Conference on Defects in Semiconductors, 18-22 Aug. 1986 , Paris, France, 1986, 97-102 p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
1986. 97-102 p.
Series
Materials science forum, ISSN 0255-5476 ; 10-12
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5802Local ID: 3667OAI: oai:DiVA.org:miun-5802DiVA: diva2:30835
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf