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Scattering probabilities for multiband hole states at high electric fields and high collision rates in 4H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 / [ed] Madar, R; Camassel, J, 2004, 1237-1240 p.Conference paper, (Refereed)
Abstract [en]

The scattering probabilities for a multiband carrier wave function have been studied for hole transport in 4H-SiC. During the drift at high electric fields it is possible to find the carriers with almost equal probability in two neighboring bands. In contrast to the standard Monte Carlo procedure, a possible interference between the components of the wave function in different bands appears in the calculation of the scattering probabilities when the time between scattering events is short. An important role is played by the overlap integral, which forbids this interference in some regions of the epsilon-k (energy-wavevector) space. We compare the results obtained using the true overlap integrals calculated from the wave functions with the common assumption, in which the overlap integral is assumed equal to one. Different scattering mechanisms, such as polar-optical phonon and intervalley optical phonon are studied. The model includes a spread in energy according to the Heisenberg uncertainty principle at short times. We have calculated the final state probability distribution considering the whole Brillouin zone of 4H-SiC for a particular set of initial states.

Place, publisher, year, edition, pages
2004. 1237-1240 p.
Series
Materials science forum, ISSN 0255-5476 ; 457-460
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-5800ISI: 000222802200296Local ID: 3584OAI: oai:DiVA.org:miun-5800DiVA: diva2:30833
Conference
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 05-10, 2003, Lyon, France
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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Hjelm, MatsNilsson, Hans-ErikLindefelt, Ulf
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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More styles
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  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
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Output format
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  • asciidoc
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