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Full band Monte Carlo simulation of short channel MOSFETs in 4H and 6H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
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1999 (English)In: Proceedings of Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications: Symposium held April 5-8, 1999, San Francisco, California, U.S.A., Warrendale, Pa.: Materials Research Society , 1999, 559- p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
Warrendale, Pa.: Materials Research Society , 1999. 559- p.
Series
Materials research society symposia proceedings, 572
Keyword [en]
Monte Carlo, 4H-SiC, 6H-SiC, MOSFET
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-5540Local ID: 549ISBN: 1-558-99479-3 (print)OAI: oai:DiVA.org:miun-5540DiVA: diva2:30573
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

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Nilsson, Hans-ErikDubaric, Ervin
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