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Monte Carlo based calculation of transport parameters for wide band gap device simulation
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
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2001 (English)In: Materials Research Society symposia proceedings, Warrendale: Materials Research Society , 2001, , T6241-T6246 p.T6241-T6246 p.Conference paper, (Refereed)
Abstract [en]

We present Monte Carlo based calculations of transport parameters useful in the simulation of III-nitride and SiC based devices. The calculations are performed using a full band ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and impact ionization transition rates. Calculations are made for the wurtzite and zincblende phases of GaN, the wurtzite phase of InN, and the 3C (cubic) and 4H phases of SiC. The basic transport parameters determined are saturation drift velocity, and the ionization coefficients as a function of applied electric field. Results from the various materials are finally compared.

Place, publisher, year, edition, pages
Warrendale: Materials Research Society , 2001. , T6241-T6246 p.T6241-T6246 p.
Series
Materials Research Society symposia proceedings, ISSN 0272-9172 ; 622
Keyword [en]
Wide band-gap semiconductors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-5509Local ID: 874ISBN: 1-55899-530-7 (print)OAI: oai:DiVA.org:miun-5509DiVA: diva2:30542
Available from: 2008-12-16 Created: 2008-12-16 Last updated: 2016-10-05Bibliographically approved

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CiteExportLink to record
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