miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Interband tunneling description of holes in Wurtzite GaN at high electric fields
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
University of Glasgow, United Kingdom.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Responsible organisation
2007 (English)In: Journal of Computational Electronics, ISSN 1569-8025, E-ISSN 1572-8137, Vol. 6, no 1-3, 163-166 p.Article in journal (Refereed) Published
Abstract [en]

We have studied the time evolution of an ensemble of holes in Wurtzite GaN under the effect of a high electric field. The density matrix equation used as a foundation in the study includes band-to-band tunneling, but disregards collisions. In the description of the ensemble dynamics the full band structure is used. The average energy and group velocity for the ensemble is calculated, as well as velocity components corresponding to the non-diagonal elements of the velocity operator (interference). The calculations have been carried out for the electric field strengths 0.4 and 4 MV/cm. A comparison is presented of the results with and without inclusion of band tunneling in the ensemble dynamics. There is also a comparison of the velocity with and without the non-diagonal elements of the velocity operator terms. A conclusion is that Monte Carlo simulations considering band tunneling, but not interference, can give accurate results.

Place, publisher, year, edition, pages
2007. Vol. 6, no 1-3, 163-166 p.
Keyword [en]
band-to-band tunneling, density matrix, GaN, high-field simulation
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-4224DOI: 10.1007/s10825-006-0081-yISI: 000208473600039Scopus ID: 2-s2.0-34247381937Local ID: 4956OAI: oai:DiVA.org:miun-4224DiVA: diva2:29256
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Hjelm, MatsNilsson, Hans-ErikLindefelt, Ulf
By organisation
Department of Information Technology and Media
In the same journal
Journal of Computational Electronics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 395 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf