miun.sePublications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Static and dynamic properties of 4.5 kV MOSFETs in 4H and 6H SiC - Simulation study
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
1996 (English)In: Proceedings of International Conference on Silicon Carbide and Related Materials, 18-21 Sept. 1995 , Kyoto, Japan, 1996, 793-796 p.Conference paper, (Other scientific)
Place, publisher, year, edition, pages
1996. 793-796 p.
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:miun:diva-3529Local ID: 3655ISBN: 0 7503 0335 2 (print)OAI: oai:DiVA.org:miun-3529DiVA: diva2:28561
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Lindefelt, Ulf
By organisation
Department of Information Technology and Media
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

Total: 61 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf