Mid Sweden University

miun.sePublications
EnglishSvenskaNorsk
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
1996 (English)In: Physical Review B (Condensed Matter), ISSN 0163-1829, Vol. 54, no 15, p. 10257-10260Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1996. Vol. 54, no 15, p. 10257-10260
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-3524Local ID: 3651OAI: oai:DiVA.org:miun-3524DiVA, id: diva2:28556
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

Open Access in DiVA

No full text in DiVA

Authority records

Lindefelt, Ulf

Search in DiVA

By author/editor
Lindefelt, Ulf
By organisation
Department of Information Technology and Media
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 105 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.46.0
|
WCAG
|
Mid Sweden University Library
|
Mid Sweden University - Research
|
DiVA Login
|
Contact