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Study of avalanche breakdown and impact ionization in 4H silicon carbide
Mid Sweden University.
1998 (English)In: Journal of Electronic Materials, ISSN 0361-5235, Vol. 27, no 4, 335-341 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1998. Vol. 27, no 4, 335-341 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-3520Local ID: 3635OAI: oai:DiVA.org:miun-3520DiVA: diva2:28552
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
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  • Other locale
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