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A model for doping-induced bandgap narrowing in 3C-, 4H-, and 6H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
1999 (English)In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ISSN 0921-5107, Vol. B61-62, no jul, 225-228 p.Article in journal (Refereed) Published
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1999. Vol. B61-62, no jul, 225-228 p.
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Natural Sciences
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URN: urn:nbn:se:miun:diva-3517Local ID: 3632OAI: oai:DiVA.org:miun-3517DiVA: diva2:28549
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
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Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
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  • Other locale
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Output format
  • html
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