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Effect of anisotropic material properties on the forward voltage drop in 6H- and 4H-SiC power diode structures
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
1999 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, Vol. 14, no 2, 125-129 p.Article in journal (Refereed) Published
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1999. Vol. 14, no 2, 125-129 p.
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Natural Sciences
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URN: urn:nbn:se:miun:diva-3514Local ID: 3630OAI: oai:DiVA.org:miun-3514DiVA: diva2:28546
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
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  • apa
  • harvard1
  • ieee
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  • vancouver
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