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Monte Carlo Study of hole mobility in Al doped 4H-SiC
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 91, no 3, 1359-1364 p.Article in journal (Refereed) Published
Abstract [en]

The ohmic transport of holes in p-type Al-doped 4H-SiC samples is investigated using a Monte Carlo tool based on a full-potential band structure. The temperature and doping dependence of the hole mobility and its anisotropy are calculated and discussed from a physical point of view, where we stress the importance of considering two-band conduction. Acoustic and optical phonon scattering, as well as ionized and neutral impurity scattering, have been considered. The Monte Carlo program also considers incomplete ionization of impurity atoms compatible with an Al ionization energy of 0.2 eV.

Place, publisher, year, edition, pages
2002. Vol. 91, no 3, 1359-1364 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-3498DOI: 10.1063/1.1429802ISI: 000173418500071Scopus ID: 2-s2.0-0036469613Local ID: 3611OAI: oai:DiVA.org:miun-3498DiVA: diva2:28530
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2016-10-17Bibliographically approved

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Lindefelt, UlfHjelm, MatsNilsson, Hans-Erik
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CiteExportLink to record
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