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Localized Electronic States around Stacking Faults in Silicon Carbide
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2002 (English)In: Physical Review B (Condensed Matter and Materials Physics), ISSN 0163-1829, Vol. 65, no 3, p. 0332303-1Article in journal (Refereed) Published
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2002. Vol. 65, no 3, p. 0332303-1
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Natural Sciences
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URN: urn:nbn:se:miun:diva-3497DOI: 10.1103/PhysRevB.65.033203ISI: 000173448900005Local ID: 3610OAI: oai:DiVA.org:miun-3497DiVA, id: diva2:28529
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-07-08Bibliographically approved

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Lindefelt, Ulf

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CiteExportLink to record
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  • apa
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