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Theoretical Study of Planar Defects in Silicon Carbide
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2002 (English)In: Journal of Physics (Condensed Matter), ISSN 0953-8984, Vol. 14, no 48, 12733-12740 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2002. Vol. 14, no 48, 12733-12740 p.
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Natural Sciences
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URN: urn:nbn:se:miun:diva-3491Local ID: 3606OAI: oai:DiVA.org:miun-3491DiVA: diva2:28523
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
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  • apa
  • ieee
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