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High quality 4H-SiC grown on various substrate orientations
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1996 (English)In: Diamond and Related Materials, v 6, n 10, Aug. 1997, 1289-92, ISSN 0925-9635, Vol. 6, no 10, p. 1289-1292Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1996. Vol. 6, no 10, p. 1289-1292
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Natural Sciences
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URN: urn:nbn:se:miun:diva-3413Local ID: 3649OAI: oai:DiVA.org:miun-3413DiVA, id: diva2:28445
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

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Lindefelt, Ulf

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