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Simulation of SiC high power devices
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
1997 (English)In: Physica Status Solidi A, ISSN 0031-8965, Vol. 162, no 1, 421-440 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1997. Vol. 162, no 1, 421-440 p.
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Natural Sciences
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URN: urn:nbn:se:miun:diva-3409Local ID: 3645OAI: oai:DiVA.org:miun-3409DiVA: diva2:28441
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2011-01-10Bibliographically approved

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Lindefelt, Ulf
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CiteExportLink to record
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  • apa
  • ieee
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