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High quality 4H-SiC grown on various substrate orientations
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1997 (English)In: First European Conference on Silicon Carbide and Related Materials (ECSCRM 96), 6-9 Oct. 1996 , Heraklion, Greece, 1997, p. 1289-1292Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
1997. p. 1289-1292
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Natural Sciences
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URN: urn:nbn:se:miun:diva-3407Local ID: 3642OAI: oai:DiVA.org:miun-3407DiVA, id: diva2:28439
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf

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CiteExportLink to record
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  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
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  • de-DE
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