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High quality 4H-SiC grown on various substrate orientations
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1997 (English)In: First European Conference on Silicon Carbide and Related Materials (ECSCRM 96), 6-9 Oct. 1996 , Heraklion, Greece, 1997, 1289-1292 p.Conference paper, (Refereed)
Place, publisher, year, edition, pages
1997. 1289-1292 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-3407Local ID: 3642OAI: oai:DiVA.org:miun-3407DiVA: diva2:28439
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf
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Department of Information Technology and Media
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf