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Magnetic properties of bound hole states for complex neutral defects in semiconductors
1986 (English)In: Journal of Luminescence, ISSN 0022-2313, Vol. 36, no 3, 149-159 p.Article in journal (Refereed) Published
Abstract [en]

The magnetic properties of an electron-hole pair bound to complex neutral defects in semiconductors are discussed and compared to experimental data for both direct- and indirect-bandgap materials. The properties of bound hole states for such defects are discussed in a general formalism, which avoids the generally inadequate effective-mass-like description often used in previous literature. In the case of low symmetry defects with a dominantly hole-attractive local potential the primary bound hole state is often nondegenerate and shows a spin-like character with a quenched angular momentum. This case has recently been demonstrated experimentally for a large number of defects in GaP and Si. A strong spin-orbit interaction may inhibit such a quenching so that the bound hole angular momentum is at least partly retained. This situation often prevails for complex defects in materials like CdTe and ZnTe, where the valence band spin-orbit splitting Δso is large. For electron-attractive central cell potentials, the bound hole state is generally effective-mass-like, and retains its anisotropic magnetic behaviour due to the hole angular momentum. Experimental data supporting this situation are also demonstrated, for both Si and compound semiconductors.

 

 

Place, publisher, year, edition, pages
1986. Vol. 36, no 3, 149-159 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-3292DOI: 10.1016/0022-2313(86)90035-9Local ID: 3670OAI: oai:DiVA.org:miun-3292DiVA: diva2:28324
Available from: 2008-09-30 Created: 2008-09-30Bibliographically approved

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Lindefelt, Ulf
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