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Conductance quantization in bismuth nanowires at 4 K
Department of Physics, Chalmers University of Technology and Göteborg University, SE-41296 Göteborg, Sweden .ORCID iD: 0000-0001-7329-3359
1997 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 78, no 26, 4990-4993 p.Article in journal (Refereed) Published
Abstract [en]

Conductance experiments on Bi nanowires at 4 K, obtained with a scanning tunneling microscope, are presented. The conductance of these Bi nanocontacts, formed between two Bi electrodes, exhibits plateaus at quantized values of G0 =  2e2/h, remaining basically constant during electrode separations of about 50 nm. This is the first time that such plateaus have been observed in semimetals. The histogram of conductance values, constructed with thousands of consecutive contact breakage conductance experiments, exhibits clear peaks at G0 and 2G0.

Place, publisher, year, edition, pages
1997. Vol. 78, no 26, 4990-4993 p.
Keyword [en]
nanowire nanoscience nanotechnology
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-3167DOI: 10.1103/PhysRevLett.78.4990Local ID: 3109OAI: oai:DiVA.org:miun-3167DiVA: diva2:28199
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2013-08-23Bibliographically approved

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