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Bistable nanoelectromechanical devices
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 84, no 20, 4074-4076 p.Article in journal (Refereed) Published
Abstract [en]

A combined transmission electron microscopy-scanning tunneling microscopy (TEM-STM) technique has been used to investigate the force interactions of silicon and germanium nanowires with gold electrodes. The I(V) data obtained typically show linear behavior between the gold electrode and silicon nanowires at all contact points, whereas the linearity of I(V) curves obtained for germanium nanowires were dependent on the point of contact. Bistable silicon and germanium nanowire-based nanoelectromechanical programmable read-only memory (NEMPROM) devices were demonstrated by TEM-STM. These nonvolatile NEMPROM devices have switching potentials as low as 1 V and are highly stable making them ideal candidates for low-leakage electronic devices.

Place, publisher, year, edition, pages
2004. Vol. 84, no 20, 4074-4076 p.
Keyword [en]
nanotechnology nanowires nanorelay nems
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:miun:diva-2330DOI: 10.1063/1.1751622Local ID: 1906OAI: oai:DiVA.org:miun-2330DiVA: diva2:27362
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2013-08-23Bibliographically approved

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Olin, Håkan
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