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Numerical study of Bloch electron dynamics in wide band-gap semiconductors
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Responsible organisation
2001 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 184, no 1-4, 199-203 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we are using numerical calculations to demonstrate the importance of band to band tunneling in wide band-gap semiconductors. We have considered 4H-SiC, 3C-SiC and wurtzite GaN as prototype semiconductors in the demonstration. Wide band-gap semiconductors allow device operation under very high-applied electric fields, where significant band to band tunneling is expected to occur. Hexagonal wide band-gap semiconductors have a valence band structure with a large number of bands separated by rather small energies. Our calculation shows that this leads to a very significant band to band tunneling even at relatively low electric fields. In cubic wide band-gap semiconductors the tunneling is much less pronounced. However, at the valence band maximum the band separations are small enough to allow significant band to band tunneling. The spin-orbit interaction tends to bend the band near the maximum creating degradation from a parabolic curvature. This bending is found to significantly influence the band to band tunneling process.

Place, publisher, year, edition, pages
2001. Vol. 184, no 1-4, 199-203 p.
Keyword [en]
Tunneling, Charge transport
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1992DOI: 10.1016/S0169-4332(01)00503-7ISI: 000173000100034Scopus ID: 2-s2.0-0035852175Local ID: 872OAI: oai:DiVA.org:miun-1992DiVA: diva2:27024
Available from: 2008-09-30 Created: 2008-09-30 Last updated: 2017-12-12Bibliographically approved

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Nilsson, Hans-Erik

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  • de-DE
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