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Resolution and Noise Properties of Scintillator Coated X-ray Detectors
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-8325-5177
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.ORCID iD: 0000-0002-3790-0729
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2001 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 466, no 1, 178-182 p.Article in journal (Refereed) Published
Abstract [en]

The imaging properties of X-ray pixel detectors depend on the quantum efficiency of X-rays, the generated signal of each X-ray photon and the distribution of the generated signal between pixels. In a scintillator coated device the signal is generated both by X-ray photons captured in the scintillator and by X-ray photons captured directly in the semiconductor. The Signal-to-Noise Ratio in the image is then a function of the number of photons captured in each of these processes and the yield, in terms of electron-hole pairs produced in the semiconductor, of each process. The spatial resolution is primarily determined by the light spreading within the scintillator. In a pure semiconductor detector the signal is generated by one process only. The Signal-to-Noise Ratio in the image is proportional to the number of X-ray photons captured within the sensitive layer. The spatial resolution is affected by the initial charge cloud generated in the semiconductor and any diffusion of carriers between the point of interaction and the readout electrode. In this paper we discuss the theory underlying the imaging properties of scintillator coated X-ray imaging detectors. The model is verified by simulations using MCNP and by experimental results. The results from the two-layer detector are compared with those from a pure semiconductor X-ray detector.

Place, publisher, year, edition, pages
2001. Vol. 466, no 1, 178-182 p.
Keyword [en]
X-ray imaging detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-1991DOI: 10.1016/S0168-9002(01)00842-7ISI: 000169789200027Scopus ID: 2-s2.0-0035927791Local ID: 871OAI: oai:DiVA.org:miun-1991DiVA: diva2:27023
Note

2nd International Workshop on Radiation Imaging Detectors, Jul 02-06, 2000, Freiburg, Germany

Available from: 2008-12-11 Created: 2008-12-11 Last updated: 2016-10-17Bibliographically approved

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Dubaric, ErvinFröjdh, ChristerNilsson, Hans-ErikPetersson, Sture
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Electrical Engineering, Electronic Engineering, Information Engineering

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